Nanocrystalline boron nitride film, image sensor including the same, field effect transistor including the same, and method of fabricating the nanocrystalline boron nitride film

An image sensor comprising:

• a substrate;
• a plurality of photodiodes on the substrate;
• and
• a nanocrystalline boron nitride film on the plurality of photodiodes, wherein
• the nanocrystalline boron nitride film includes a plurality of nanocrystalline boron nitride crystals having a size within a range of 5 nm to 100 nm,
• the nanocrystalline boron nitride film has a dielectric constant within a range of 2.5 to 5.5 at a 100 kHz operating frequency, and
• the nanocrystalline boron nitride film has a hardness of 1 GPa to 10 GPa.

An electric field effect transistor comprising:

• a source;
• a drain;
• a channel between the source and the drain;
• a gate facing the channel;
• a gate insulating film between the gate and the channel;
• and
• a spacer between the source and the gate and between the drain and the gate, wherein
• the spacer includes a nanocrystalline boron nitride film, the nanocrystalline boron nitride film including a plurality of nanocrystalline boron nitride crystals having a size within a range of 5 nm to 100 nm,
• the nanocrystalline boron nitride film has a dielectric constant within a range of 2.5 to 5.5 at a 100 kHz operating frequency, and
• the nanocrystalline boron nitride film has a hardness of 1 GPa to 10 GPa.