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US 12,473,309 B2Granted
Organometallic compound and method of manufacturing integrated circuit using the same
AssigneesSamsung Electronics Co., Ltd., Adeka Corporation
InventorsSeungmin Ryu, Younsoo Kim, Gyuhee Park, Younjoung Cho, Yutaro Aoki, Wakana Fuse, Kazuki Harano, Takanori Koide, Yoshiki Manabe, Kazuya Saito, Hiroyuki Uchiuzou
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Abstract
An organometallic compound and a method of manufacturing an integrated circuit (IC) device, the organometallic compound being represented by Formula (I),
Claims17
An organometallic compound represented by Formula (I),
- wherein, in Formula (I), M is a tantalum atom;
- or a vanadium atom, R1 is a C1-C5 straight-chain alkyl group or a C3-C5 branched alkyl group, R2 and R3 are each independently a C1-C8 straight-chain alkyl group or a C3-C8 branched alkyl group, at least one of R2 and R3 being substituted with at least six fluorine atom, R4 is a C1-C10 straight-chain alkyl group or a C3-C10 branched alkyl group, and n is an integer of 0 to 5, and
- wherein the organometallic compound is a liquid at a temperature of about 20° C. at an atmospheric pressure.
An organometallic compound represented by Formula (I),
- wherein, in Formula (I), M is a niobium atom,
- n is 0,
- R2 and R3 are each independently a hexafluoroisopropyl group or a nonafluoro tert-butyl group, and
- R4 is a C1-C10 straight-chain alkyl group or a C3-C10 branched alkyl group, and
- wherein the organometallic compound is a liquid at a temperature of about 20° C. at an atmospheric pressure.
2 more elements
A method of manufacturing an integrated circuit (IC) device, the method comprising forming a metal-containing film on a substrate by using an organometallic compound represented by Formula (I):
- wherein, in Formula (I), M is a niobium atom, n is 0, R2 and R3 are each independently a hexafluoroisopropyl group or a nonafluoro tert-butyl group, and R4 is a C1-C10 straight-chain alkyl group or a C3-C10 branched alkyl group, and
- wherein the organometallic compound is a liquid at a temperature of about 20° C. at an atmospheric pressure.
Dependencies are inferred from the claim text.