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US 12,473,197 B2Granted
Chip package
AssigneeXintec Inc.
InventorsWei-Luen Suen, Jiun-Yen Lai, Hsing-Lung Shen, Tsang-Yu Liu
Life of this patent
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Abstract
A chip package includes a semiconductor substrate and a metal layer. The semiconductor substrate has an opening and a sidewall surrounding the opening, in which an upper portion of the sidewall is a concave surface. The semiconductor substrate is made of a material including silicon. The metal layer is located on the semiconductor substrate. The metal layer has plural through holes above the opening to define a MEMS (Microelectromechanical system) structure, in which the metal layer is made of a material including aluminum.
Claims19
A chip package, comprising:
- a semiconductor substrate having an opening and a sidewall surrounding the opening, wherein an upper portion of the sidewall is a concave surface, and the semiconductor substrate is made of a material comprising silicon, and the concave surface of the sidewall faces toward and surrounds the opening, and a lower portion of the sidewall of the semiconductor substrate is a vertical surface that faces toward and surrounds the opening, the sidewall transitions from the concave surface to the vertical surface without any horizontal surface, and the vertical surface extends from a bottom end of the concave surface to a bottommost surface of the semiconductor substrate;
- and
- a metal layer located on the semiconductor substrate and having plural through holes above the opening to define a MEMS (Microelectromechanical system) structure, wherein the metal layer is made of a material comprising aluminum, and the semiconductor substrate has no portion in the opening and overlapped with the MEMS structure in a vertical direction.
A chip package, comprising:
- a semiconductor substrate having an opening and a sidewall surrounding the opening, wherein an upper portion of the sidewall is a concave surface, and the concave surface of the sidewall faces toward and surrounds the opening, and a lower portion of the sidewall of the semiconductor substrate is a vertical surface that faces toward and surrounds the opening, the sidewall transitions from the concave surface to the vertical surface without any horizontal surface, and the vertical surface extends from a bottom end of the concave surface to a bottommost surface of the semiconductor substrate;
- a metal layer located on the semiconductor substrate and having plural through holes above the opening to define a MEMS (Microelectromechanical system) structure, wherein the semiconductor substrate has no portion in the opening and overlapped with the MEMS structure in a vertical direction;
- and
- an oxide layer located on a side of the metal layer facing away from the semiconductor substrate.
1 more element
Dependencies are inferred from the claim text.