High quality quantum computer components
AssigneeApplied Materials, Inc.
InventorsZihao Yang, Mingwei Zhu, Lan Yu, Zhebo Chen, Robert Jan Visser, Nag Patibandla
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Abstract
Exemplary methods of fabricating high quality quantum computing components are described. The methods include removing native oxide from a deposition surface of a silicon substrate in a cleaning chamber of a processing system, and transferring the silicon substrate under vacuum to a deposition chamber of the processing system. The methods further include depositing an aluminum layer on the deposition surface of the silicon substrate in the deposition chamber, where an interface between the aluminum layer and the deposition surface of the silicon substrate is oxygen free.
Claims13
A processing method to form a device component, the processing method comprising:
- removing native oxide from a deposition surface of a silicon substrate in a cleaning chamber of a processing system;
- transferring the silicon substrate under vacuum to a deposition chamber of the processing system;
- depositing an aluminum layer on the deposition surface of the silicon substrate in the deposition chamber, wherein an interface between the aluminum layer and the deposition surface of the silicon substrate is oxygen free;
- forming a patterned photoresist layer on the aluminum laver, wherein the patterned photoresist layer comprises patterned openings that provide access to an exposed portion of the aluminum layer;
- removing the exposed portion of the aluminum layer down to the silicon substrate to form a patterned aluminum laver;
- removing the patterned photoresist layer from the patterned aluminum layer;
- removing native aluminum oxide from an exposed surface of the patterned aluminum layer, wherein the removal of the native aluminum oxide forms a cleaned patterned aluminum layer that is free of oxygen on the exposed surface of the patterned aluminum layer;
- and
- forming an aluminum oxide layer on the cleaned patterned aluminum layer in the deposition chamber.
A processing method to form a device component, the processing method comprising:
- removing native oxide from a deposition surface of a silicon substrate in a cleaning chamber of a processing system;
- transferring the silicon substrate under vacuum to a deposition chamber of the processing system;
- depositing a first aluminum layer on the deposition surface of the silicon substrate in the deposition chamber, wherein an interface between the first aluminum layer and the deposition surface of the silicon substrate is oxygen free;
- patterning the first aluminum layer to form a first patterned aluminum layer;
- forming and patterning a patterned dielectric layer on the first patterned aluminum layer and the silicon substrate;
- forming an aluminum oxide layer on the first patterned aluminum layer, wherein the aluminum oxide layer is not formed on the first patterned aluminum layer that is covered by the patterned dielectric layer;
- forming a second aluminum layer on the aluminum oxide layer and the patterned dielectric layer, wherein the silicon substrate stays in the deposition chamber for both the forming of the aluminum oxide layer and the forming of the second aluminum layer;
- and
- removing the patterned dielectric layer from the silicon substrate, wherein the removal of the patterned dielectric layer forms a second patterned aluminum layer from the second aluminum layer.
Dependencies are inferred from the claim text.