Spin current magnetization rotational element, magnetoresistance effect element, and magnetic memory

A spin current magnetization rotational element comprising:

• a first ferromagnetic metal layer configured for a direction of magnetization to be changed;
• and
• a spin-orbit torque wiring extending in a direction intersecting a lamination direction of the first ferromagnetic metal layer and bonded to the first ferromagnetic metal layer,
• wherein the lamination direction of the first ferromagnetic metal layer is set as a direction z, a direction which is perpendicular to the direction z and is parallel to an extending direction of the spin-orbit torque wiring is set as a direction x, and a direction orthogonal to the direction x and the direction z is set as a direction y,
• wherein in the spin-orbit torque wiring, there is a portion of the spin-orbit torque wiring not overlapping with the first ferromagnetic metal layer in the direction y, in a plan view viewed from the direction z, such that in the plan view, the spin-orbit torque wiring is disposed to not cover a part of the first ferromagnetic metal layer in the direction y,
• wherein the first ferromagnetic metal layer is connected to a first power supply which controls a current I1 which flows in the lamination direction of the first ferromagnetic metal layer, which is the direction y, and the current I1 has a spin transfer torque effect, and
• wherein the spin-orbit torque wiring is connected to a second power supply which controls a current I2 which flows in the extending direction of the spin-orbit torque wiring, which is the direction x, and the current I2 has a spin orbit torque effect.