Light emitting diode chip having distributed bragg reflector

A light emitting apparatus comprising:

• a bottom cover having an upper side;
• a plurality of circuit substrates disposed on the bottom cover;
• a reflective layer disposed on the plurality of circuit substrates;
• a diffusion plate disposed on the circuit substrates;
• and
• light sources arranged in a predetermined pattern on the plurality of circuit substrates, each of the light sources including:
• a substrate;
• a light emitting layer disposed on the substrate and comprising an active layer;
• a transparent electrode disposed on the light emitting layer;
• a distributed Bragg reflector (DBR) disposed on a lower side of the substrate;
• and
• a superficial layer disposed on a lower side of the DBR;
• lenses disposed on the light sources, respectively,
• wherein the diffusion plate covers the plurality of circuit substrates at once,
• wherein the DBR includes first material layers having a low index of refraction and second material layers having a high index of refraction alternately disposed one over another,
• wherein the substrate is disposed between the DBR and the light emitting layer,
• wherein a peripheral region of the substrate disposed between the light sources is covered by the reflective layer,
• wherein the DBR includes a region that a value of a reference wavelength multiplied with 0.25 is different than a value of one of a thickness of the first material layers multiplied with the low index of refraction and a value of one of a thickness of the second material layers multiplied with the high index of refraction,
• wherein the reference wavelength is 554 nm,
• wherein the superficial layer and the first material layers include a same material, and
• wherein one of the second material layers of the DBR contacts with the superficial layer, and the superficial layer is thicker than the one of the second material layers.

A light emitting apparatus comprising:

• a bottom cover having an upper side;
• a plurality of circuit substrates disposed on the bottom cover;
• a reflective layer disposed on the plurality of circuit substrates;
• an optical sheet disposed on the circuit substrates;
• and
• light sources arranged in a predetermined pattern on the plurality of circuit substrates, each of the light sources including:
• a substrate;
• a light emitting layer disposed on the substrate and comprising an active layer;
• a transparent electrode disposed on the light emitting layer;
• a distributed Bragg reflector (DBR) disposed on a lower side of the substrate;
• and
• a superficial layer disposed on a lower side of the DBR;
• lenses disposed on the light sources, respectively,
• wherein the optical sheet covers the plurality of circuit substrates at once,
• wherein the DBR includes first material layers having a low index of refraction and second material layers having a high index of refraction alternately disposed one over another,
• wherein the substrate is disposed between the DBR and the light emitting layer, and a region between the light sources is covered by the reflective layer,
• wherein the DBR includes a region that a value of a reference wavelength multiplied with 0.25 is different than a value of one of a thickness of the first material layers multiplied with the low index of refraction and a value of one of a thickness of the second material layers multiplied with the high index of refraction,
• wherein the reference wavelength is 554 nm,
• wherein the superficial layer and the first material layers include a same material, and
• wherein one of the second material layers of the DBR contacts with the superficial layer, and the superficial layer is thicker than the one of the second material layers.