Semiconductor detector and method of manufacturing same

A semiconductor detector comprising:

• an n-type semiconductor substrate;
• a detection electrode formed on a first surface of the n-type semiconductor substrate and configured to collect charges generated by incidence of radiation;
• a plurality of drift electrodes formed surrounding the detection electrode and applied with a voltage causing a potential gradient in which a potential changes toward the detection electrode so that the charges move toward the detection electrode;
• and
• a radiation incidence window provided on a second surface of the n-type semiconductor substrate;
• a P-type semiconductor region formed by adding boron to a surface side of the second surface through the radiation incidence window;
• and
• a depleting electrode causing a reverse bias between the P-type semiconductor region formed on the second surface and an N-type semiconductor region formed in the n-type semiconductor substrate,
• wherein fluorine is additionally added to the P-type semiconductor region, and
• wherein a region with the highest concentration of fluorine is positioned more closely to the surface side of the second surface than a region with the highest concentration of boron.