Semiconductor component having a SiC semiconductor body

A semiconductor component, comprising:

• a SiC semiconductor body;
• a gate electrode structure extending from a first surface of the SiC semiconductor body into the SiC semiconductor body, the gate electrode structure having a conductive connection structure;
• a shielding region formed in the SiC semiconductor body at a bottom of the conductive connection structure;
• a contact formed between the conductive connection structure and the shielding region;
• a source region along a sidewall of the gate electrode structure, the source region extending from the first surface into the SiC semiconductor body;
• and
• a first load electrode above the first surface and electrically connected to the source region,
• wherein the conductive connection structure is electrically connected to both the first load electrode and the shielding region,
• wherein the shielding region has a central section which has a lateral first width, wherein in a doping plane extending approximately parallel to the bottom, a dopant concentration in the central section deviates by not more than 10% from a maximum value of the dopant concentration in the shielding region in the doping plane.