Array substrate and display device including thereof

An array substrate, comprising:

• a plurality of thin film transistors corresponding to a plurality of sub-pixels;
• a shield metal disposed under each of the plurality of thin film transistors;
• a first passivation layer disposed on the plurality of thin film transistors;
• a light emitting diode disposed on the first passivation layer and including a reflection pattern;
• and
• a second passivation layer disposed on the light emitting diode,
• wherein each of the plurality of thin film transistors includes:
• an active layer including a channel region, a source region positioned at one side of the channel region and a drain region positioned at an opposite side of the channel region;
• a gate insulating layer covering the channel region;
• a gate electrode on the gate insulating layer;
• an interlayer insulating layer covering the active layer, the gate insulating layer and the gate electrode;
• a source electrode disposed on the interlayer insulating layer and connected to the source region;
• and
• a drain electrode disposed on the interlayer insulating layer and connected to the drain region, and
• wherein:
• at least one of the shield metal, the channel region and the array substrate includes a thermal gradient portion that causes a temperature of a first area in the channel region to be different from a temperature of a second area in the channel region;
• and
• a first electrode of the light emitting diode is electrically connected to the thin film transistor through a connection electrode passing through the first passivation layer and the second passivation layer.

A display device, comprising an array substrate including:

• a substrate;
• a shield metal disposed over the substrate;
• a thin film transistor disposed over the shield metal;
• a first passivation layer disposed on the thin film transistor;
• a light emitting diode disposed on the first passivation layer and including a reflection pattern;
• and
• a second passivation layer disposed on the light emitting diode,
• wherein;
• the thin film transistor includes an active layer over the shield metal, a source electrode, a drain electrode and a gate electrode;
• the active layer includes a channel region, a source region positioned at one side of the channel region and a drain region positioned at an opposite side of the channel region;
• the shield metal or the channel region is provided with a thermal gradient portion that causes a temperature of a first area in the channel region to be different from a temperature of a second area in the channel region;
• an electro-luminescence element electrically connected to the thin film transistor of the array substrate;
• and
• a first electrode of the light emitting diode is electrically connected to the thin film transistor through a connection electrode passing through the first passivation layer and the second passivation laver.