Semiconductor structure having multiple dielectric waveguide channels and method for forming semiconductor structure

A method of forming a semiconductor structure, comprising:

• providing a first inter-level dielectric (ILD) layer overlying a molding layer, the molding layer comprising a backside redistribution layer (RDL);
• forming a plurality of first openings through the first ILD layer to thereby expose the backside RDL through the molding layer;
• forming a first lower transmitter electrode and a first lower receiver electrode in the plurality of first openings to be respectively coupled to the backside RDL;
• forming a first dielectric waveguide overlying the first ILD layer, the first lower transmitter electrode and the first lower receiver electrode;
• depositing a second ILD layer overlying the first dielectric waveguide;
• forming a second lower transmitter electrode and a second lower receiver electrode extending through the second ILD and respectively coupled to the first lower transmitter electrode and the first lower receiver electrode;
• and
• forming a second dielectric waveguide overlying the second ILD layer, the second lower transmitter electrode and the second lower receiver electrode,
• wherein the first dielectric waveguide comprises a first transmission end portion and a first receiver end portion opposite to the first transmission end portion, wherein the first dielectric waveguide is configured to guide a first electromagnetic signal from the first transmission end portion to the first receiver end portion, wherein the second dielectric waveguide comprises a second transmission end portion and a second receiver end portion opposite to the second transmission end portion, wherein the second dielectric waveguide is configured to guide a second electromagnetic signal from the second transmission end portion to the second receiver end portion, wherein the second electromagnetic signal is different in frequency from the first electromagnetic signal.