Apparatus for manufacturing a semiconductor device and method of manufacturing the apparatus
AssigneeSamsung Electronics Co., Ltd.
InventorsHwanyeol Park, Kyung Nam Kang, Jeong Hoon Nam, Se Jin Kyung, Dae Wee Kong, Tae-Min Kim
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Abstract
An apparatus for manufacturing a semiconductor device and a method of manufacturing the apparatus, the apparatus including a heater configured to heat a target, and a coating layer, the coating layer including a ternary material of transition metal (M)-aluminum (Al)-nitrogen (N) represented by the following Chemical Formula: MxAl1-xNy, [Chemical Formula] wherein x and y satisfy the following relations: 0<x<1 and y≥1.
Claims14
An apparatus for manufacturing a semiconductor device, the apparatus comprising:
- a heater configured to heat a target for the semiconductor device, the heater including an aluminum nitride;
- wherein the heater has a coating layer on the heater, the coating layer including:
- a base layer, and
- a passivation layer on the base layer, the passivation layer having a first nitrogen content higher than a second nitrogen content of the base layer, and wherein:
- the base layer includes a first layer having a first aluminum content and a second layer on the first layer, the second layer having a second aluminum content different from the first aluminum content,
- the first layer contacts the heater, and
- the first aluminum content of the first layer is higher than the second aluminum content of the second layer;
- and
- each layer of the coating layer independently includes a ternary material of transition metal (M)-aluminum (Al)-nitrogen (N) represented by Chemical Formula:
- MxAl1-xNy, [Chemical Formula]
- wherein x and y satisfy:
- 0<x<1 and y≥1.
An apparatus for manufacturing a semiconductor device, the apparatus comprising:
- a process chamber;
- and
- a loader in the process chamber, a target for the semiconductor device being supportable on the loader,
- wherein:
- the loader includes a heater including aluminum nitride configured to heat the target, the heater including an aluminum nitride,
- a on the heater has a coating layer on the heater, the coating layer including a first layer, a second layer, and a passivation layer that are sequentially stacked, wherein the coating layer is configured to prevent formation of cracks in the heater including aluminum nitride,
- the first layer contacts the heater,
- an aluminum content of the first layer is higher than an aluminum content of the second layer,
- a nitrogen content of the passivation layer is higher than a nitrogen content of the second layer, and
- each of the first layer, the second layer, and the passivation layer independently includes a ternary material of transition metal (M)-aluminum (Al)-nitrogen (N) represented by Chemical Formula:
- MxAl1-xNy, [Chemical Formula]
- x and y satisfy:
- 0<x<1 and y≥1.
A method of manufacturing an apparatus for manufacturing a semiconductor device such that the apparatus includes a heater configured to heat a target for the semiconductor device, the method comprising
- forming a coating layer on the heater including an aluminum nitride,
- wherein forming the coating layer includes:
- forming a base layer and forming a passivation layer on the base layer, the passivation layer having a first nitrogen content higher than a second nitrogen content of the base layer,
- wherein the base layer includes a first layer having a first aluminum content and a second layer on the first layer, the second layer having a second aluminum content different from the first aluminum content, and
- wherein the first layer contacts the heater, and the first aluminum content of the first layer is higher than the second aluminum content of the second layer;
- wherein:
- each layer of the coating layer independently includes a ternary material of transition metal (M)-aluminum (Al)-nitrogen (N) represented by Chemical Formula:
- MxAl1-xNy, and [Chemical Formula]
- x and y satisfy:
- 0<x<1 and y≥1.
Dependencies are inferred from the claim text.