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US 12,468,216 B2Granted
Phase shift mask for EUV lithography and manufacturing method for the phase shift mask
AssigneeSK hynix Inc.
InventorTae Joong Ha
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Abstract
There is provided a phase shift mask for extreme-ultraviolet lithography and a method of manufacturing the phase shift mask. The phase shift mask includes a substrate, a reflective layer, device patterns, a frame pattern, or phase shift patterns. The frame pattern is a pattern that includes alignment holes exposing portions of the reflective layer. The phase shift patterns overlap with the device patterns.
Claims8
A method of manufacturing a phase shift mask, the method comprising;
- forming a reflective layer on a substrate;
- forming a lower layer on the reflective layer;
- forming an upper layer for phase shift on the lower layer;
- patterning first phase shift patterns and a second phase shift pattern from the upper layer and patterning device patterns overlapping with the first phase shift patterns and a frame pattern overlapping with the second phase shift pattern from the lower layer, by sequentially etching the upper layer and the lower layer, the frame pattern including alignment holes exposing portions of the reflective layer;
- and
- selectively removing the second phase shift pattern from the frame pattern.
3 more elements
Dependencies are inferred from the claim text.