Test device for determining an effective work function, method of manufacturing the same and method of determining an effective work function
AssigneeSK hynix Inc.
InventorGyeong Ho Hyun
Life of this patent
Estimating the term…
Abstract
A test device may include a test memory device, an insulation layer and a charge injection electrode. The test memory device may include a memory layer and a gate electrode layer on a semiconductor substrate. The insulation layer may be arranged on the test memory device. The charge injection electrode may be arranged on the insulation layer to inject a charge into the test memory device based on a voltage.
Claims19
A test device for determining an effective work function, the test device comprising:
- a test memory device including a memory layer and a gate electrode layer on a semiconductor substrate;
- an insulation layer on the test memory device;
- and
- a charge injection electrode on the insulation layer to inject a charge into the test memory device based on a voltage applied to the charge injection electrode.
A method of manufacturing a test device for determining an effective work function of a gate electrode in a memory device, the memory device including a semiconductor channel layer, a memory layer, and the gate electrode, the method comprising:
- forming a test memory device including a memory layer and a gate electrode layer on a semiconductor substrate, the memory layer including a material substantially the same as a material of the memory layer in the memory device, and the gate electrode layer including a material substantially the same as a material of the gate electrode in the memory device;
- forming an insulation layer on the test memory device;
- and
- forming a charge injection electrode, which injects a charge into the test memory device by applying a voltage, on the insulation layer.
A method of determining an effective work function of a gate electrode layer using a test memory device, an insulation layer and a charge injection electrode, the test memory device including a memory layer and the gate electrode layer on a semiconductor substrate and the insulation layer on the test memory device, the method comprising:
- measuring a capacitance change of the test memory device based on voltages applied to the charge injection electrode to determine the effective work function of the gate electrode layer.
Dependencies are inferred from the claim text.