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US 12,467,147 B2Granted
Vapor cleaning of substrate surfaces
AssigneeLam Research Corporation
InventorsDavid Mui, Gerome Michel Dominique Melaet, Nathan Musselwhite, Michael Ravkin, Mark Kawaguchi, Ilia Kalinovski
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Abstract
A method for cleaning a substrate includes arranging the substrate in a processing chamber; controlling a pressure of the processing chamber to a predetermined pressure range; controlling a temperature of the processing chamber to a predetermined temperature range; and supplying a vapor mixture including a metal chelating vapor for a first period to remove metal contamination from surfaces of the substrate.
Claims12
A method for cleaning a substrate, comprising:
- arranging the substrate in a processing chamber to clean the substrate using a cleaning process selective to silicon-based material without leaving residue and without collapsing high aspect ratio features on the substrate;
- and
- performing the cleaning process by:
- controlling a pressure of the processing chamber to a predetermined pressure range;
- controlling a temperature of the processing chamber to a predetermined temperature range;
- supplying a vapor mixture including a metal chelating vapor for a first period to remove metal contamination from surfaces of the substrate;
- after the first period, removing reactants from the processing chamber;
- supplying an oxidizing gas mixture to the processing chamber for a second period;
- and
- removing reactants from the processing chamber after the second period.
7 more elements
A method for cleaning a substrate, comprising:
- arranging the substrate in a processing chamber;
- controlling a pressure of the processing chamber to a predetermined pressure range;
- controlling a temperature of the processing chamber to a predetermined temperature range;
- supplying a vapor mixture including a metal chelating vapor for a first period to remove metal contamination from surfaces of the substrate, wherein the metal chelating vapor includes trifluoroacetic acid and ethylenediamine;
- after the first period, removing reactants from the processing chamber;
- supplying an oxidizing gas mixture to the processing chamber for a second period;
- and
- removing reactants from the processing chamber after the second period.
5 more elements
Dependencies are inferred from the claim text.