Conformal molybdenum deposition
AssigneeApplied Materials, Inc.
InventorsSrinivas Gandikota, Tuerxun Ailihumaer, Yixiong Yang, Seshadri Ganguli, Yogesh Sharma
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Abstract
Conformally deposited molybdenum films having reduced resistivity and methods of forming the same are disclosed. The methods include converting an amorphous silicon layer to a metal layer by thermally soaking the amorphous silicon layer comprising silicon atoms in the presence of a metal compound selected from the group consisting of a molybdenum compound and a tungsten compound until at least a portion of the silicon atoms in the amorphous silicon layer are replaced by metal atoms selected from the group consisting of molybdenum atoms and tungsten atoms. The methods include conformally depositing a molybdenum film on the metal layer.
Claims20
A deposition method comprising:
- forming an amorphous silicon layer directly on a dielectric layer on a surface of a feature including two sidewalls on a substrate;
- converting the amorphous silicon layer to a metal layer by continuously thermally soaking the amorphous silicon layer comprising silicon atoms in the presence of a metal compound for a period of time in a range of from 30 seconds 600 seconds without repeating the continuously thermally soaking the amorphous silicon layer, the metal compound selected from the group consisting of a molybdenum compound and a tungsten compound until at least a portion of the silicon atoms in the amorphous silicon layer are replaced by metal atoms selected from the group consisting of molybdenum atoms and tungsten atoms;
- and
- conformally depositing a molybdenum film on the metal layer.
A method of filling a feature formed on a surface of a substrate, the method comprising:
- forming an amorphous silicon layer directly on a dielectric region within the feature on the surface of the substrate, the feature comprising at least one surface defining a via, the via comprising a bottom surface and two sidewalls defining a width in a range 2 nm to 100 nm and an aspect ratio of depth/width in a range of 15 to 20:1 and comprising the dielectric;
- converting the amorphous silicon layer to a metal layer by continuously thermally soaking the amorphous silicon layer comprising silicon atoms in the presence of a metal compound for a period of time in a range of from 30 seconds 600 seconds without repeating the continuously thermally soaking the amorphous silicon layer, the metal compound selected from the group consisting of a molybdenum compound and a tungsten compound until at least a portion of the silicon atoms in the amorphous silicon layer are replaced by metal atoms selected from the group consisting of molybdenum atoms and tungsten atoms;
- and
- conformally depositing a molybdenum film on the metal layer to fill the feature, the conformally deposited molybdenum film substantially free of seams or voids so that less than 0.5% of the molybdenum film on an atomic basis comprises voids and/or seams.
Dependencies are inferred from the claim text.