MEMS switch, preparation method thereof, and electronic apparatus

A method for preparing a Micro-Electro-Mechanical System (MEMS) switch, comprising:

• sequentially forming a coplanar waveguide line structure and an isolation structure on a substrate, wherein the coplanar waveguide line structure comprises a first wire, a first Direct Current (DC) bias line, a second wire, a second DC bias line and a third wire arranged at intervals sequentially;
• the second wire is one of a Radio Frequency (RF) signal transmission line and a ground line, and the first wire and the third wire are the other one of the RF signal transmission line and the ground line;
• forming a sacrifice layer on the coplanar waveguide line structure and the isolation structure;
• forming a film bridge on the sacrifice layer, wherein the film bridge is crossed between the first wire and the third wire, and is connected with the first wire and the third wire, respectively;
• and
• removing the sacrifice layer and retaining the film bridge;
• wherein the isolation structure comprises a first isolation layer disposed on a side of the first DC bias line away from the substrate, and a second isolation layer disposed on a side of the second DC bias line away from the substrate;
• wherein the film bridge comprises:
• a middle region, and a first connection region and a second connection region arranged on two sides of the middle region in the first direction, the first connection region is configured to be connected with the first wire, the second connection region is configured to be connected with the third wire, the middle region comprises:
• a first sub-region, a second sub-region and a third sub-region connected sequentially, there is a first overlapping region between an orthographic projection of the first sub-region on the substrate and an orthographic projection of the first DC bias line on the substrate, there is a second overlapping region between an orthographic projection of the second sub-region on the substrate and an orthographic projection of the second wire on the substrate, there is a third overlapping region between an orthographic projection of the third sub-region on the substrate and the orthographic projection of the first DC bias line on the substrate, and the first overlapping region, the second overlapping region and the third overlapping region are spaced along the first direction.