Semiconductor device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWen-Chih Chiou, Ping-Yin Hsieh, Ying-Ching Shih, Pu Wang, Li-Hui Cheng, Yi-Huan Liao, Chih-Hao Chen
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Abstract
A semiconductor device includes a substrate, a package structure, a thermal interface material (TIM) structure, and a lid structure. The package structure is disposed on the substrate. The TIM structure is disposed on the package structure. The TIM structure includes a metallic TIM layer and a non-metallic TIM layer in contact with the metallic TIM layer, and the non-metallic TIM layer surrounds the metallic TIM layer. The lid structure is disposed on the substrate and the TIM structure.
Claims20
A semiconductor device, comprising:
- a substrate;
- a package structure disposed on the substrate;
- a thermal interface material (TIM) structure disposed on the package structure, wherein the TIM structure comprises a metallic TIM layer and a non-metallic TIM layer in contact with the metallic TIM layer, the non-metallic TIM layer surrounds the metallic TIM layer, and a thickness of the non-metallic TIM layer is different from a thickness of the metallic TIM layer;
- and
- a lid structure disposed on the substrate and the TIM structure.
A semiconductor device, comprising:
- a substrate;
- a package structure disposed on the substrate;
- a lid structure disposed over a rear surface of the package structure face away from the substrate;
- and
- a thermal interface material (TIM) structure, sandwiched between the rear surface of the package structure and the lid structure, wherein the lid structure is thermally coupled to the package structure through the TIM structure, and the TIM structure comprises:
- a metallic portion disposed on the package structure;
- and
- a non-metallic portion surrounding the metallic portion, wherein a thermal conductivity of the metallic portion is higher from a thermal conductivity of the non-metallic portion, and a thickness of the non-metallic TIM layer is different from a thickness of the metallic TIM layer.
A manufacturing method of a semiconductor device, comprising:
- providing a substrate;
- bonding a package structure to the substrate;
- forming a non-metallic TIM layer having at least one opening on the package structure;
- forming a metallic TIM layer into the at least one opening of the non-metallic TIM layer, wherein a thickness of the non-metallic TIM layer is different from a thickness of the metallic TIM layer;
- forming an adhesive layer over the substrate;
- placing a lid structure on the adhesive layer, the non-metallic TIM layer and the metallic TIM layer;
- and
- attaching the lid structure to the substrate and the package structure through the adhesive layer, the non-metallic TIM layer and the metallic TIM layer.
Dependencies are inferred from the claim text.