Metal-containing structures, and methods of treating metal-containing material to increase grain size and/or reduce contaminant concentration

A conductive structure comprising a metal-containing conductive material having a first region adjacent a second region;

• the first region having a greater concentration of one or both of fluorine and boron relative to the second region, the conductive structure being configured to comprise a metal-containing core which is at least partially-surrounded by the metal-containing conductive material, and wherein:
• said one or both of fluorine and boron are comprised by contaminant, and the concentration of said one or both of fluorine and boron is a contaminant concentration;
• the metal-containing conductive material is directly adjacent to the metal-containing core at an interface;
• the metal-containing conductive material includes a second surface offset from the interface;
• and
• a gradient of said contaminate concentration increases in a direction from the interface toward the second surface.

A conductive structure comprising a metal-containing conductive material having a first region adjacent a second region;

• the first region having a greater concentration of one or both of fluorine and boron relative to the second region, the conductive structure being configured to comprise the metal-containing conductive material as a metal-containing core which is at least partially-surrounded by a second metal-containing conductive material, and wherein:
• the second metal-containing conductive material comprises a metal nitride;
• the metal-containing core consists essentially of metal;
• said one or both of fluorine and boron are comprised by contaminant, and the concentration of said one or both of fluorine and boron is a contaminant concentration;
• the second metal-containing conductive material is directly adjacent to the metal-containing core at an interface;
• and
• a gradient of said contaminate concentration within the metal-containing core increases in a direction toward the interface.

An integrated assembly comprising:

• a conductive structure supported by a semiconductor substrate;
• and
• the conductive structure comprising a metal-containing conductive material having a first region adjacent a second region;
• the first region having a different crystallinity relative to the second region, the conductive structure containing a concentration gradient of one or both of fluorine and boron and having a greater concentration of the one or both of fluorine and boron in the first region relative to the second region.