Semiconductor device

A semiconductor device that is a facedown mountable semiconductor device, the semiconductor device comprising:

• a semiconductor substrate;
• a low-concentration impurity layer that is provided on a front face side of the semiconductor substrate;
• a first vertical metal-oxide semiconductor (MOS) transistor that is provided in a first region of a semiconductor layer that is a combination of the semiconductor substrate and the low-concentration impurity layer;
• a second vertical MOS transistor that is provided in a second region adjacent to the first region in a plan view of the semiconductor layer;
• a metal layer that is connected to and in contact with an entire surface on a back face side of the semiconductor substrate;
• and
• a support that is bonded to a back face side of the metal layer via an adhesive,
• wherein in the plan view, the support is larger in area than the semiconductor layer and encompasses the semiconductor layer,
• a thickness of the support is greater than a thickness of the semiconductor layer,
• in a cross-sectional view of the semiconductor device that includes a center of the semiconductor layer and an outer periphery of the semiconductor layer in the plan view, a height of the adhesive along a lateral face of the semiconductor layer does not reach a top face of the semiconductor layer,
• when a semiconductor chip of the semiconductor device excluding the support and the adhesive is seen in the cross-sectional view, the semiconductor chip is in a curved shape that is convex in a direction toward the support,
• wherein −0.75×w+135.3≤M≤−1.5×w+270.6 is satisfied, where an amount of curvature of the semiconductor chip is denoted by w μm and a shortest distance from the outer periphery of the semiconductor layer to an outer periphery of the support in the plan view is denoted by M μm.