Stacked clip design for GaN half bridge IPM
AssigneeTexas Instruments Incorporated
InventorsKwang-Soo Kim, Makoto Shibuya, Woochan Kim, Vivek Arora
Life of this patent
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Abstract
An electronic device includes a substrate having first and second conductive traces, a semiconductor die having a transistor with a first terminal and a second terminal, and first and second metal clips. The first metal clip has a first end portion coupled to the first terminal of the transistor, and a second end portion coupled to the first conductive trace of the substrate. The second metal clip has a first end portion coupled to the second terminal of the transistor and a second end portion coupled to the second conductive trace of the substrate, and a middle portion of the second metal clip is spaced apart from and at least partially overlying a portion of the first metal clip.
Claims19
An electronic device, comprising:
- a substrate having first and second conductive traces;
- a semiconductor die having a transistor with;
- a first terminal and a second terminal on a same side of the semiconductor die;
- a first metal clip having first and second end portions and a middle portion that joins the first and second end portions of the first metal clip, the first end portion of the first metal clip coupled to the first terminal of the transistor, and the second end portion of the first metal clip coupled to the first conductive trace of the substrate;
- and
- a second metal clip having first and second end portions and a middle portion that joins the first and second end portions of the second metal clip, the first end portion of the second metal clip coupled to the second terminal of the transistor, the second end portion of the second metal clip coupled to the second conductive trace of the substrate, and the middle portion of the second metal clip spaced apart from and at least partially overlying a portion of the first metal clip.
A half-bridge circuit, comprising:
- a first transistor with a first source and a first drain;
- a second transistor with a second source and a second drain;
- a first metal clip coupled between the first source and a switching node;
- a second metal clip at least partially overlying a portion of the first metal clip and coupled between the first drain and a supply node;
- a third metal clip coupled between the second source and a reference node;
- and
- a fourth metal clip at least partially overlying a portion of the third metal clip and coupled between the second drain and the switching node.
A method of fabricating an electronic device, the method comprising:
- attaching a first end portion of a first metal clip to a first terminal of a transistor of a semiconductor die;
- attaching a second end portion of the first metal clip to a first conductive trace of a substrate;
- attaching a first end portion of;
- a second metal clip to a second terminal of the transistor, the first and second terminals on a same side of the semiconductor die;
- and
- attaching a second end portion of the second metal clip to a second conductive trace of the substrate with a middle portion of the second metal clip spaced apart from and at least partially overlying a portion of the first metal clip.
Dependencies are inferred from the claim text.