Dry etching apparatus and wafer etching system using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsHyunsu Hwang, Suhyeon Ku, Junyun Kweon, Solji Song, Dongjoon Oh, Chungsun Lee
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AssigneeSamsung Electronics Co., Ltd.
InventorsHyunsu Hwang, Suhyeon Ku, Junyun Kweon, Solji Song, Dongjoon Oh, Chungsun Lee
Estimating the term…
Provided is a dry etching apparatus including: a plasma process chamber; an edge ring which is arranged in the plasma process chamber and on which a wafer is mounted; a shadow ring positioned to be spaced apart by a first vertical distance above the edge ring during a plasma etching process of the wafer; an operation unit coupled to the shadow ring and having a lift pin that raises and lowers the shadow ring; a fixing portion having a plurality of fixing pins engaged with the lift pin at different positions to fix a lowering point of the shadow ring; and a distance control unit that controls the fixing portion to determine the first vertical distance, wherein the first vertical distance is determined by a first horizontal distance between the wafer and the edge ring.
A dry etching apparatus comprising:
A wafer etching system comprising:
A wafer etching method comprising:
Dependencies are inferred from the claim text.