Semiconductor-on-insulator (SOI) substrate and method for forming

An integrated circuit, comprising:

• a semiconductor body;
• an oxide layer disposed over the semiconductor body;
• a monocrystalline silicon layer disposed over the oxide layer;
• an interconnect structure disposed over the monocrystalline silicon layer,
• wherein the oxide layer separates the semiconductor body from the monocrystalline silicon layer, and wherein the oxide layer comprises a halogen species embedded in oxide material of the oxide layer;
• and
• wherein the halogen species is defined by a concentration profile containing a first peak nearest to the interconnect structure and a second peak nearest to the semiconductor body that is greater than the first peak.

An integrated circuit comprising:

• a semiconductor base;
• a semiconductor oxide layer disposed over and in direct contact with an upper surface of the semiconductor base;
• and
• a semiconductor device layer disposed over and in direct contact with an upper surface of the semiconductor oxide layer,
• wherein the semiconductor oxide layer includes an upper region nearest the semiconductor device layer and a lower region nearest the semiconductor base, the upper region having a first getter doping profile and the lower region having a second getter doping profile that differs from the first getter doping profile;
• and
• wherein the semiconductor base includes a first circumferential outer edge and the semiconductor device layer includes a second circumferential outer edge that is concentric with regard to the first circumferential outer edge and bounded by the first circumferential outer edge when viewed from above.