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US 12,454,493 B2Granted
CVI matrix densification process
AssigneeRtx Corporation
InventorsYing She, Nitin Garg, Andrew J. Lazur, Olivier H. Sudre
Life of this patent
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Abstract
Disclosed herein is a chemical vapor infiltration method including flowing ceramic precursors through a preform and depositing a matrix material on the preform at a first gas infiltration pressure, increasing the gas filtration pressure to a second gas infiltration pressure, and lowering the gas infiltration pressure to a third gas infiltration pressure which is intermediate to the first and second gas infiltration pressures.
Claims19
A chemical vapor infiltration method comprising:
- flowing ceramic precursors through a preform in a reactor and depositing a matrix material on the preform at a first gas infiltration pressure of the reactor;
- increasing the first gas filtration pressure to a second gas infiltration pressure;
- and
- lowering the second gas infiltration pressure to a third gas infiltration pressure which is intermediate to the first and second gas infiltration pressures;
- wherein the second gas infiltration pressure is maintained until infiltration gas diffusion rate rather than deposition rate controls matrix densification rate;
- and
- wherein the third gas infiltration pressure maintains matrix densification under reaction control rather than diffusion control.
4 more elements
A chemical vapor infiltration method comprising:
- flowing ceramic precursors through a preform in a reactor and depositing a matrix material on the preform at a first gas infiltration pressure of the reactor;
- increasing the first gas filtration pressure to a second gas infiltration pressure;
- and
- lowering the second gas infiltration pressure to a third gas infiltration pressure which is intermediate to the first and second gas infiltration pressures, wherein the second gas infiltration pressure is maintained until infiltration gas diffusion rate rather than deposition rate controls matrix densification rate;
- and
- further comprising modifying a temperature, precursor flow rate or both,
- wherein the first gas infiltration pressure is 0.01 torr to 1 torr.
4 more elements
A chemical vapor infiltration method comprising:
- flowing SiC ceramic precursors through a SiC preform preform in a reactor and depositing a matrix material on the preform at a first gas infiltration pressure of the reactor;
- increasing the first gas infiltration pressure to a second gas infiltration pressure;
- and
- lowering the second gas infiltration pressure to a third gas infiltration pressure which is intermediate to the first and second gas infiltration pressures;
- wherein the second gas infiltration pressure is maintained until infiltration gas diffusion rate rather than deposition rate controls matrix densification rate;
- and
- wherein the third gas infiltration pressure maintains matrix densification under reaction control rather than diffusion control.
4 more elements
Dependencies are inferred from the claim text.