US 12,453,132 B2Granted

Thin film transistor array, fabrication method thereof, and display apparatus comprising the thin film transistor array

AssigneeLG Display Co., Ltd.

InventorsKyeongJu Moon, SoYoung Noh

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Abstract

Disclosed is a thin film transistor array comprising a substrate, a first thin film transistor on the substrate, and a second thin film transistor on the substrate, wherein the first thin film transistor includes a first active layer including an oxide semiconductor on the substrate, the first active layer includes a first channel portion, a first conductor portion, and a first middle portion between the first channel portion and the first conductor portion, the second thin film transistor includes a second active layer including an oxide semiconductor on the substrate, the second active layer includes a second channel portion, a second conductor portion, and a second middle portion between the second channel portion and the second conductor portion, and resistivity of the first conductor portion of the first thin film transistor is greater than resistivity of the second conductor portion of the second thin film transistor.

Claims13

Dependent claims

A thin film transistor array comprising:

a substrate;
a first thin film transistor on the substrate, the first thin film transistor including a first active layer on the substrate comprising a first oxide semiconductor, the first active layer comprising a first channel portion, a first conductor portion, and a first middle portion between the first channel portion and the first conductor portion;
and
a second thin film transistor on the substrate, the second thin film transistor including a second active layer on the substrate comprising a second oxide semiconductor, the second active layer comprising a second channel portion, a second conductor portion, and a second middle portion between the second channel portion and the second conductor portion,
wherein a resistivity of the first conductor portion of the first thin film transistor is greater than a resistivity of the second conductor portion of the second thin film transistor,
wherein the first conductor portion and the first middle portion of the first active layer of the first thin film transistor include a dopant, and the second conductor portion and the second middle portion of the second active layer of the second thin film transistor include the dopant, and
wherein the first conductor portion of the first thin film transistor has a first doping concentration of the dopant, and the first channel portion has a second doping concentration of the dopant that is less than the first doping concentration, and
the second conductor portion of the second thin film transistor has a third doping concentration of the dopant, and the second channel portion has a fourth doping concentration of the dopant that is less than the third doping concentration.

5 more elements

A thin film transistor array comprising:

a substrate;
a first oxide semiconductor thin film transistor on the substrate, the first oxide semiconductor thin film transistor including a first active layer having a first channel portion, a first conductor portion, and a first middle portion between the first channel portion and the first conductor portion;
and
a second oxide semiconductor thin film transistor on the substrate, the second oxide semiconductor thin film transistor including a second active layer having a second channel portion, a second conductor portion, and a second middle portion between the second channel portion and the second conductor portion,
wherein a length of the first channel portion of the first oxide semiconductor thin film transistor is greater than a length of the second channel portion of the second oxide semiconductor thin film transistor, and a length of the first middle portion of the first oxide semiconductor thin film transistor is less than a length of the second middle portion of the second oxide semiconductor thin film transistor,
wherein the first conductor portion and the first middle portion of the first active layer of the first oxide semiconductor thin film transistor include a dopant, and the second conductor portion and the second middle portion of the second active layer of the second oxide semiconductor thin film transistor include the dopant, and
wherein the first conductor portion of the first oxide semiconductor thin film transistor has a first doping concentration of the dopant, and the first channel portion has a second doping concentration of the dopant that is less than the first doping concentration, and
the second conductor portion of the second oxide semiconductor thin film transistor has a third doping concentration of the dopant, and the second channel portion has a fourth doping concentration of the dopant that is less than the third doping concentration.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/901,702Filed 1 Sep 2022
Priority: KR 10-2021-01178383 Sep 2021
Published: US 2023/0073848 A19 Mar 2023
Granted: 21 Oct 2025
Term ends: Not estimatedThe source records don’t support an estimate.

Classification10 codes

H10D 30/6755
Characterised by the active materials: oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
H10D 30/031
Of FETs having insulated gates [IGFET]: of thin-film transistors [TFT]
H10D 30/6719
Characterised by the doping profiles, e.g. having lightly-doped source or drain extensions: having significant overlap between the lightly-doped…
H10D 30/6757
Thin-film transistors [TFT]: characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile