US 12,451,857 B2Granted

Attenuation circuit

AssigneeNXP B.V.

InventorsXin Yang, Dominicus Martinus Wilhelmus Leenaerts, Rana Azhar Shaheen

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Abstract

An attenuation circuit comprising: a connection-node for connecting to an RF connection; an isolation-capacitor connected in series between the connection-node and an internal-node; a first-bias-resistor connected in series between a first-control-node and the internal-node; a second-bias-resistor connected in series between the internal-node and a second-control-node; a first-attenuation-diode connected in series between the first-control-node and the internal-node, wherein the anode of the first-attenuation-diode is closest to the first-control-node; a second-attenuation-diode connected in series between the internal-node and the second-control-node, wherein the anode of the second-attenuation-diode is closest to the internal-node; a first-decoupling-capacitor connected in series between the first-control-node and the reference-node; and a second-decoupling-capacitor connected in series between the second-control-node and the reference-node.

Claims19

Dependent claims

An attenuation circuit comprising:

a connection-node for connecting to an RF connection;
a first-control-node configured to receive a first-control-signal;
a second-control-node configured to receive a second-control-signal;
an internal-node;
a reference-node for connecting to a reference terminal;
an isolation-capacitor connected in series between the connection-node and the internal-node;
a first-bias-resistor connected in series between the first-control-node and the internal-node;
a second-bias-resistor connected in series between the internal-node and the second-control-node;
a first-attenuation-diode connected in series between the first-control-node and the internal-node, wherein the anode of the first-attenuation-diode is closest to the first-control-node, and wherein the first-attenuation-diode is connected in parallel with the first-bias-resistor;
a second-attenuation-diode connected in series between the internal-node and the second-control-node, wherein the anode of the second-attenuation-diode is closest to the internal-node, and wherein the second-attenuation-diode is connected in parallel with the second-bias-resistor;
a first-decoupling-capacitor connected in series between the first-control-node and the reference-node;
and
a second-decoupling-capacitor connected in series between the second-control-node and the reference-node.

10 more elements

An attenuation circuit comprising:

a connection-node for connecting to an RF connection;
a first-control-node configured to receive a first-control-signal;
a second-control-node configured to receive a second-control-signal;
an internal-node;
a reference-node for connecting to a reference terminal;
an isolation-capacitor connected in series between the connection-node and the internal-node;
a first-bias-resistor connected in series between the first-control-node and the internal-node;
a second-bias-resistor connected in series between the internal-node and the second-control-node;
a first-attenuation-diode connected in series between the first-control-node and the internal-node, wherein the anode of the first-attenuation-diode is closest to the first-control-node;
a second-attenuation-diode connected in series between the internal-node and the second-control-node, wherein the anode of the second-attenuation-diode is closest to the internal-node;
a first-decoupling-capacitor connected in series between the first-control-node and the reference-node;
a second-decoupling-capacitor connected in series between the second-control-node and the reference-node;
a first-attenuation-resistor having a first terminal and a second terminal;
a second-attenuation-resistor having a first terminal and a second terminal;
a first-compensation-diode having an anode-terminal and a cathode-terminal;
and
a second-compensation-diode having an anode-terminal and a cathode-terminal;
wherein:
the first-terminal of the first-resistor is connected to the first-control-node;
the second-terminal of the first-resistor is connected to the anode-terminal of the first-attenuation-diode;
the cathode-terminal of the first-attenuation-diode is connected to the internal-node;
the anode-terminal of the second-attenuation-diode is connected to the internal-node;
the cathode-terminal of the second-attenuation-diode is connected to the first-terminal of the second-attenuation-resistor;
the second-terminal of the second-attenuation-resistor is connected to the second-control-node;
the anode-terminal of the first-compensation-diode is connected to the second-terminal of the first-resistor;
the cathode-terminal of the first-compensation-diode is connected to the anode-terminal of the second-compensation-diode;
and
the cathode-terminal of the second-compensation-diode is connected to the first terminal of the second resistor.

25 more elements

An amplifier circuit comprising:

a first amplifier that has a first-amplifier-output-terminal;
an attenuation circuit that includes
a connection-node connected to the first-amplifier-output-terminal,
a first-control-node configured to receive a first-control-signal,
a second-control-node configured to receive a second-control-signal,
an internal-node,
a reference-node for connecting to a reference terminal,
an isolation-capacitor connected in series between the connection-node and the internal-node,
a first-bias-resistor connected in series between the first-control-node and the internal-node,
a second-bias-resistor connected in series between the internal-node and the second-control-node,
a first-attenuation-diode connected in series between the first-control-node and the internal-node, wherein the anode of the first-attenuation-diode is closest to the first-control-node, and wherein the first-attenuation-diode is connected in parallel with the first-bias-resistor,
a second-attenuation-diode connected in series between the internal-node and the second-control-node, wherein the anode of the second-attenuation-diode is closest to the internal-node, and wherein the second-attenuation-diode is connected in parallel with the second-bias-resistor,
a first-decoupling-capacitor connected in series between the first-control-node and the reference-node, and
a second-decoupling-capacitor connected in series between the second-control-node and the reference-node;
and
a first-amplifier-inductor connected in series between the connection-node and a supply-node, wherein the first-amplifier-inductor is configured to:
provide some of a functionality of the first amplifier;
and
compensate for an off-capacitance of each of the first- and second-attenuation-diodes.

16 more elements

Dependencies are inferred from the claim text.

Facts

Application: 18/051,596Filed 1 Nov 2022
Priority: EP 2130666330 Nov 2021
Published: US 2023/0170871 A11 Jun 2023
Granted: 21 Oct 2025
Term ends: Not estimatedThe source records don’t support an estimate.

Classification12 codes

H03H 7/255
The element being a diode: the element being a PIN diode
H03F 1/22
Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements: by use of cascode coupling, i.e.…
H03F 3/19
High-frequency amplifiers, e.g. radio frequency amplifiers: with semiconductor devices only
H03F 3/245
Of transmitter output stages: with semiconductor devices only