Semiconductor laser and method of production for optoelectronic semiconductor parts

A semiconductor laser comprising

• a carrier,
• an edge-emitting laser diode which is mounted on the carrier and which has an active zone for generating laser radiation and has a facet with a radiation exit region,
• a protective cover, and
• an adhesive, by means of which the protective cover is fastened to the facet and to a side surface of the carrier, wherein
• an average distance between a light entrance side of the protective cover and the facet is at most 15 μm, and
• the semiconductor laser is configured to be operated in a normal atmosphere without additional gas-tight encapsulation,
• in which the light entrance side is planar shaped and oriented inclined relative to the facet so that laser radiation reflected at the light entrance side is kept away from the radiation exit region and/or such that a resonator of the laser diode remains undisturbed by the reflected laser radiation,
• wherein an angle α between the light entrance side and the facet is between 5° and 25° inclusive,
• wherein a cavity is formed in the region of the active zone on the facet, said cavity is surrounded all around by the adhesive as seen in plan view of the facet, such that the radiation exit region, from which the laser radiation leaves the laser diode, is free of the adhesive,
• wherein the cavity has side walls which are curved towards the adhesive such that the cavity has a biconvex shape in the radiation exit region when seen in cross-section perpendicular to the facet, and
• wherein within the cross-section and starting from a maximum extent in a direction parallel to the facet, the cavity narrows in the direction towards the facet and in the direction towards the light entrance side of the protective cover.