Integrated inductor with a stacked metal wire

A method of forming an integrated inductor in an integrated circuit (IC) device, the method comprising:

• forming a first layer including (a) a lower metal inductor structure and (b) a lower metal interconnect structure;
• forming a second layer including (a) a middle metal inductor structure and (b) a middle metal interconnect structure;
• forming a third metal layer including (a) an upper metal inductor structure and (b) an upper metal interconnect structure;
• wherein the lower metal inductor structure, the middle metal inductor structure, and the upper metal inductor structure collectively define a multi-layer inductor wire of the integrated inductor;
• and
• wherein the lower metal interconnect structure, the middle metal interconnect structure, and the upper metal interconnect structure collectively define a multi-layer interconnect structure physically distinct from the multi-layer inductor wire;
• wherein the multi-layer inductor wire of the elongated inductor wire includes an overlap region in which an overcrossing section of the upper metal inductor structure, configured to carry current in a first direction, crosses over an undercrossing section of the lower metal inductor structure, configured to carry current in a second direction different than the first direction, wherein the overcrossing section of the upper metal inductor structure is physically separated and electrically insulated from the undercrossing section of the lower metal inductor structure by a gap in the middle metal inductor structure.

A method of forming an integrated circuit (IC) device, comprising:

• forming an elongated inductor wire by a process including:
• forming a continuous lower metal layer structure;
• forming a discontinuous middle metal layer structure over the continuous lower metal layer structure, the discontinuous middle metal layer structure including first and second physical sections of the discontinuous middle metal layer structure separated by a middle metal layer structure gap;
• and
• forming a continuous upper metal structure over the discontinuous middle metal layer structure;
• wherein the middle metal layer structure gap is located at an overlap region of the elongated inductor wire in which an overcrossing section of the continuous upper metal layer structure, configured to carry current in a first direction, crosses over an undercrossing section of the continuous lower metal layer structure, configured to carry current in a second direction different than the first direction, and wherein the overcrossing section of the continuous upper metal layer structure is physically separated and electrically insulated from the undercrossing section of the continuous lower metal layer structure by the middle metal layer structure gap.