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US 12,451,406 B2Granted
Silicon nitride substrate and method of manufacturing the same
AssigneeProterial, Ltd.
InventorsRei Fukumoto, Youichiro Kaga, Kei Shimada
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Abstract
Color unevenness generated on a surface of a silicon nitride substrate is reduced. A silicon nitride substrate formed by nitriding silicon containing in a sheet-shaped green body includes a first surface and a second surface opposite to the first surface. In this case, when color difference between a center and an edge of at least one surface of the first surface and the second surface is expressed to be “ΔE*ab”, a relation “ΔE*ab≤1.5” is established.
Claims8
A silicon nitride substrate comprising:
- a first surface;
- and
- a second surface opposite to the first surface,
- wherein a planar shape is rectangular, each side length of which is equal to or larger than 100 mm,
- a thermal conductivity is equal to or higher than 110 W/(m·K),
- when color difference between a center and an edge of at least one surface of the first surface and the second surface is expressed to be “ΔE*ab”, a relation “0<ΔE*ab≤1.5” is established at all edges positioned inward from each corner by 15 mm in a direction to the center.
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A method of manufacturing a silicon nitride substrate comprising steps of:
- (a) preparing a slurry containing silicon power;
- (b) forming a green body from the slurry;
- and
- (c) sintering the green body in a furnace,
- wherein the step (c) includes a nitriding step of nitriding the green body by heating the green body at a predetermined heating temperature, and,
- in the nitriding step, an average of a temperature rise amount per unit time in a range from 1270° C. to 1340° C. is equal to or lower than 3.1° C./h.
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Dependencies are inferred from the claim text.