Copper-ceramic bonded body, insulated circuit board, method for producing copper-ceramic bonded body, and method for producing insulated circuit board
AssigneeMitsubishi Materials Corporation
InventorNobuyuki Terasaki
Life of this patent
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Abstract
A copper-ceramic bonded body includes a copper member made of copper or a copper alloy, and a ceramic member made of silicon nitride, the copper member and the ceramic member being bonded to each other, in which a maximum length of a Mg—N compound phase which is present at a bonded interface between the copper member and the ceramic member is less than 100 nm, and in a unit length along the bonded interface, the number density of the Mg—N compound phase in a range of a length of 10 nm or more and less than 100 nm is less than 8 pieces/μm.
Claims6
A copper-ceramic bonded body comprising:
- a copper member made of copper or a copper alloy;
- and
- a ceramic member made of silicon nitride,
- wherein the copper member and the ceramic member are bonded to each other,
- only Mg—N compound phase is present at a bonded interface between the copper member and the ceramic member, wherein assuming that a total amount of Mg, N, and Si in the Mg—N compound phase is 100 atomic %, a Si concentration is 25 atomic % or less,
- a maximum length of the Mg—N compound phase is less than 100 nm, and
- in a unit length along the bonded interface, a number density of the Mg—N compound phase in a range of a length of 10 nm or more and less than 100 nm is less than 8 pieces/μm.
An insulated circuit board comprising:
- a copper sheet made of copper or a copper alloy;
- and
- a ceramic substrate made of silicon nitride,
- wherein the copper sheet is bonded to a surface of the ceramic substrate,
- only Mg—N compound phase is present at a bonded interface between the copper sheet and the ceramic substrate, wherein assuming that a total amount of Mg, N, and Si in the Mg—N compound phase is 100 atomic %, a Si concentration is 25 atomic % or less,
- a maximum length of the Mg—N compound phase is less than 100 nm, and
- in a unit length along the bonded interface, a number density of the Mg—N compound phase in a range of a length of 10 nm or more and less than 100 nm is less than 8 pieces/μm.
Dependencies are inferred from the claim text.