# US 12,451,322 B2 · Method of forming a multipole device, method of influencing an electron beam, and multipole device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,451,322 B2 - Document ID: US12451322B2 - Status: Granted - Kind: B2 - Application number: 18/110,284 - Filed: 2023-02-15 - Published: 2024-08-15 - Granted: 2025-10-21 - Earliest claimed: 2023-02-15 - Assignees: ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH - Applicants: ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH - Inventors: John Breuer; Dominik Patrick Ehberger; Kathrin Mohler; Ivo Liska - Web page: https://patentgrep.com/patent/US12451322B2 ## CPC - H01J 37/1472: {Deflecting along given lines} - H01J 37/09: Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields - H01J 37/153: Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators - H01J 37/28: with scanning beams {(H01J37/268, H01J37/292, H01J37/2955 take precedence)} - H01J 2237/022: Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube - H01J 2237/1516: Multipoles - H01J 2237/1534: Aberrations - H01J 2237/24514: Beam diagnostics including control of the parameter or property diagnosed (H01J2237/30472 takes precedence) - H01J 2237/282: Determination of microscope properties - H01J 2237/31732: Depositing thin layers on selected microareas - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) ## Abstract A method of forming a multipole device (100) for influencing an electron beam (11) is provided. The method is carried out in an electron beam apparatus (200) that comprises an aperture body (110) having at least one aperture opening (112). The method comprises directing the electron beam (11) onto two or more surface portions of the aperture body (110) on two or more sides of the at least one aperture opening (112) to generate an electron beam-induced deposition pattern (120) configured to act as a multipole in a charged state, particularly configured to act as a quadrupole, a hexapole and/or an octupole. The electron beam-induced deposition pattern (120) can be an electron beam-induced carbon or carbonaceous pattern. Further provided are methods of influencing an electron beam in an electron beam apparatus, particularly with a multipole device as described herein. Further provided is a multipole device for influencing an electron beam in an electron beam apparatus in a predetermined manner. ## Claims ### Claim 1 A method of forming a multipole device for influencing an electron beam, the method carried out in an electron beam apparatus that comprises an aperture body having at least one aperture opening, the method comprising: deflecting the electron beam off an optical axis of the electron beam apparatus to impinge successively on two or more surface portions of the aperture body on two or more sides of the at least one aperture opening to generate an electron beam-induced deposition pattern configured to act as a multipole in a charged state. ### Claim 2 (depends on 1) The method of claim 1, wherein the electron beam-induced deposition pattern is a carbonaceous or carbon pattern derived from hydrocarbons present in the electron beam apparatus. ### Claim 3 (depends on 1) The method of claim 1, wherein the electron beam-induced deposition pattern is formed to comprise a plurality of electrode portions that are distributed in a circumferential direction around the at least one aperture opening and that provide a multipole having a predetermined azimuthal orientation. ### Claim 4 (depends on 1) The method of claim 1, wherein the electron beam-induced deposition pattern is generated with an n-fold rotational symmetry with respect to the at least one aperture opening, particularly a 2-fold, 3-fold, 4-fold, 6-fold, 8-fold, or a higher order rotational symmetry, or combinations thereof. ### Claim 5 (depends on 1) The method of claim 1, wherein the electron beam-induced deposition pattern is configured to act as a quadrupole, a hexapole, an octupole, a higher-order multipole, or as combinations thereof in the charged state. ### Claim 6 (depends on 1) The method of claim 1, wherein the aperture body is arranged at a position between an electron beam source and an objective lens of the electron beam apparatus, and the at least one aperture opening is centered with respect to an optical axis of the electron beam apparatus. ### Claim 7 (depends on 1) The method of claim 1, wherein the electron beam is successively focused onto the two or more surface portions of the aperture body to form two or more electrode portions of the multipole. ### Claim 8 (depends on 1) The method of claim 1, further comprising: at least partially removing the electron beam-induced deposition pattern from the aperture body in the electron beam apparatus; and directing the electron beam on the aperture body to generate a second beam-induced deposition pattern configured to act as a second multipole. ### Claim 9 (depends on 8) The method of claim 8, wherein at least partially removing the electron beam-induced deposition pattern comprises at least one of heating the aperture body to a temperature suitable for deposition pattern removal and introducing a cleaning gas for deposition pattern removal into the electron beam apparatus. ### Claim 10 A method of forming a multipole device for influencing an electron beam, the method carried out in an electron beam apparatus that comprises an aperture body having at least one aperture opening, the method comprising: determining a beam aberration of the electron beam in the electron beam apparatus, and directing the electron beam onto two or more surface portions of the aperture body on two or more sides of the at least one aperture opening to generate an electron beam-induced deposition pattern configured to act as a multipole in a charged state, wherein the electron beam-induced deposition pattern is generated in a geometry for at least partially compensating or reducing said beam aberration when the electron beam at least partially propagates through the at least one aperture opening. ### Claim 11 A method of forming a multipole device for influencing an electron beam, the method carried out in an electron beam apparatus that comprises an aperture body having at least one aperture opening, the method comprising: directing the electron beam onto two or more surface portions of the aperture body on two or more sides of the at least one aperture opening to generate an electron beam-induced deposition pattern configured to act as a multipole in a charged state, wherein the at least one aperture opening is configured to act as a beam-limiting opening for the electron beam and has a diameter of 100 μm or less. ### Claim 12 A method of forming a multipole device for influencing an electron beam, the method carried out in an electron beam apparatus that comprises an aperture body having at least one aperture opening, the method comprising: directing the electron beam onto two or more surface portions of the aperture body on two or more sides of the at least one aperture opening to generate an electron beam-induced deposition pattern configured to act as a multipole in a charged state, the method further comprising influencing the electron beam with the multipole device by: directing the electron beam onto the at least one aperture opening such that an outer portion of the electron beam is blocked by the aperture body and charges up the deposition pattern, and an inner portion of the electron beam propagates through the at least one aperture opening and is influenced by the deposition pattern acting as the multipole in the charged state. ### Claim 13 (depends on 1) A multipole device for influencing an electron beam, wherein the multipole device is formed by the method of claim 1.