Electron beam devices with semiconductor ultraviolet light source

A device comprising:

• a semiconductor ultraviolet light source for emitting light;
• a transition layer at least partially transparent to the light of the semiconductor ultraviolet light source and attached to the semiconductor ultraviolet light source;
• an anode terminal, an anode, and an anode electrode;
• the anode being attached to the transition layer;
• the anode electrode and the anode terminal being attached to the anode, the anode having a first surface;
• a photocathode having a first surface facing towards the first surface of the anode;
• and
• a separation layer located between and in contact with the first surface of the photocathode and the first surface of the anode, the separation layer being configured to create a vacuum gap between the first surface of the photocathode and the first surface of the anode;
• wherein the anode terminal extends distally into the vacuum gap;
• wherein the semiconductor ultraviolet light source generates photoelectrons at a surface of the photocathode that are transmitted via the vacuum gap to the anode terminal, and
• wherein the semiconductor ultraviolet light source, the transition layer, the anode terminal, the anode, and the anode electrode, the photocathode, and the separation layer are configured together as a monolithic integrated element.

A device comprising:

• a semiconductor ultraviolet light source;
• a photocathode having a first surface;
• an anode terminal and an anode, the anode having a first surface facing towards the first surface of the photocathode, the anode being incorporated between the semiconductor ultraviolet light source and the photocathode;
• and
• a separation layer located between and in contact with the first surface of the photocathode and the first surface of the anode, the separation layer being configured to create vacuum gaps between the first surface of the photocathode and the first surface of the anode;
• wherein the anode terminal extends distally into at least one of the vacuum gaps;
• wherein the semiconductor ultraviolet light source generates photoelectrons at a surface of the photocathode that are transmitted via the vacuum gaps to the anode terminal, and
• wherein the semiconductor ultraviolet light source, the photocathode, the anode terminal, the anode, and the separation layer are configured together as a monolithic integrated element.

A device comprising:

• a semiconductor ultraviolet light source for emitting light;
• a transition layer at least partially transparent to the light of the semiconductor ultraviolet light source and attached to the semiconductor ultraviolet light source;
• a photocathode attached to the transition layer, the photocathode having a first surface;
• a photocathode electrode attached to the photocathode;
• an anode having a first surface facing towards the first surface of the photocathode;
• a separation layer located between and in contact with the first surface of the photocathode and the first surface of the anode, the separation layer being configured to create a vacuum gap between the first surface of the photocathode and the first surface of the anode;
• and
• an anode terminal connected to the anode and extending distally into the vacuum gap;
• wherein the semiconductor ultraviolet light source generates photoelectrons at a surface of the photocathode that are transmitted via the vacuum gap to the anode terminal, and
• wherein the semiconductor ultraviolet light source, the transition layer, the photocathode, the photocathode electrode, the anode, the anode terminal, and the separation layer are configured together as a monolithic integrated element.

A device comprising:

• a semiconductor ultraviolet light source;
• an anode terminal, an anode, and an anode electrode;
• the anode being attached to the semiconductor ultraviolet light source;
• the anode electrode and the anode terminal being attached to the anode, the anode having a first surface;
• and
• a photocathode having a first surface facing towards the first surface of the anode;
• and
• a separation layer located between and in contact with the first surface of the photocathode and the first surface of the anode, the separation layer being configured to create a vacuum gap between the first surface of the photocathode and the first surface of the anode;
• wherein the anode terminal extends distally into the vacuum gap;
• wherein the semiconductor ultraviolet light source generates photoelectrons at a surface of the photocathode that are transmitted via the vacuum gap to the anode terminal, and
• wherein the semiconductor ultraviolet light source, the anode terminal, the anode, the anode electrode, the photocathode, and the separation layer are configured together as a monolithic integrated element.