Pattern forming method, resist material, and pattern forming apparatus

A pattern forming method, comprising:

• applying a resist material onto a substrate to form a resist film,
• introducing a metal into the resist film,
• exposing, and
• developing,
• wherein:
• the resist material comprises a polymer, and the polymer comprises a unit derived from structures represented by the following formula (101):
• wherein, in the formula (101), R1 each independently represents a hydrogen atom, an alkyl group optionally having a substituent, an acyl group optionally having a substituent, an allyl group optionally having a substituent, an alkoxy group optionally having a substituent, or an alkylsilyl group optionally having a substituent, and a plurality of R1 may be the same or different;
• R11 represents a hydrogen atom or an alkyl group optionally having a substituent;
• R2 represents a hydrogen atom, an alkyl group, a fluorine atom, a chlorine atom, a bromine atom, or a halogenated alkyl group;
• and Y1 represents a single bond or a linking group,
• the polymer is a main-chain scission type polymer, and
• the introducing a metal is established between the applying the resist material and the exposing.