Method of inspecting semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsDaehyun Jung, Yujeong Sin, Sunggon Jung
Life of this patent
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Abstract
A method of inspecting a semiconductor device, includes: scanning a plurality of first circuit pattern layers of the semiconductor device and generating a plurality of first images respectively corresponding the plurality of first circuit pattern layers of the semiconductor device; overlapping the plurality of first images with each other and counting a plurality of first defects in the overlapped first images; setting main inspection areas with priority orders by using position coordinates of the counted first defects; and storing the main inspection areas with the position coordinates of the counted first defects.
Claims20
A method of inspecting a semiconductor device, the method comprising:
- scanning a plurality of first circuit pattern layers of the semiconductor device, and generating a plurality of first images respectively corresponding the plurality of first circuit pattern layers of the semiconductor device;
- overlapping the plurality of first images with each other and counting a plurality of first defects in the overlapped first images;
- setting main inspection areas with priority orders by using position coordinates of the counted first defects;
- and
- storing the main inspection areas with the position coordinates of the counted first defects.
A method of inspecting a semiconductor device, the method comprising:
- scanning a plurality of circuit pattern layers of the semiconductor device in a process of manufacturing the semiconductor device and generating a plurality of images respectively corresponding the plurality of circuit pattern layers of the semiconductor device;
- overlapping the plurality of images with each other and counting a plurality of defects in the overlapped images;
- setting main inspection areas with priority orders based on a number of the counted defects;
- storing the main inspection areas with position coordinates of the counted defects.
A method of inspecting a semiconductor device, the method comprising:
- scanning a plurality of circuit pattern layers of a semiconductor device in a process of manufacturing the semiconductor device and generating a plurality of images respectively corresponding to the scanned circuit pattern layers;
- overlapping the plurality of images with each other and count a plurality of defects on the plurality of circuit pattern layers based on a number of the plurality of defects in the overlapped images;
- setting main inspection areas with priority orders by using position coordinates of the counted defects;
- classifying and storing the main inspection areas with the position coordinates of the counted defects based on a type of the semiconductor devices;
- scanning the plurality of circuit pattern layers of the semiconductor device in the stored main inspection areas based on the priority orders;
- obtaining the position coordinates of the plurality of defects from the plurality of circuit pattern layers scanned based on the priority orders;
- and
- updating the main inspection areas based on the obtained position coordinates of the plurality of defects.
Dependencies are inferred from the claim text.