Inspection method, substrate processing method including the same, and substrate processing device using the substrate processing method

A substrate processing method comprising:

• causing an analysis device to perform an inspection method for identifying a condition in a chamber;
• wherein the inspection method comprises:
• causing the analysis device to receive spectrum data of a first optical signal collected in the chamber by using optical emission spectrometry;
• causing the analysis device to select data of a first section and data of a second section, which have a first section size, from the spectrum data;
• causing the analysis device to scale each of the data of the first section and the data of the second section to a value greater than or equal to 0 and less than or equal to 1;
• causing the analysis device to convert the scaled data by using a fitting function f(x)=Ae−ω|xn|+c, where n is a rational number greater than or equal to 1, and less than or equal to 5;
• causing the analysis device to determine a peak probability of each of the data of the first section and the data of the second section by using the fitting function;
• if the peak probability of each of the data of the first section and the data of the second section is less than a reference point, causing the analysis device to convert the peak probability into 0;
• if the peak probability of each of the data of the first section and the data of the second section is equal to or greater than the reference point, causing the analysis device to covert the peak probability into 1;
• causing the analysis device to derive first data of the first optical signal;
• and
• causing the analysis device to extract a first similarity by comparing the first data with reference data of a reference optical signal
• wherein the analysis device derives the reference data and the first data using a same method;
• causing the analysis device to identify whether the condition in the chamber is a normal state by causing the analysis device to determine whether outside gas inflow occurred in the chamber based on the extracted first similarity;
• and
• causing the analysis device to control, based on the condition in the chamber being identified as the normal state, a plasma source to perform a plasma processing operation comprising controlling processing a substrate in the chamber using plasma.

A substrate processing device comprising:

• a chamber;
• a plasma source configured to generate plasma for processing a substrate in the chamber;
• an optical emission spectrometer (OES) configured to measure spectrum data of a first optical signal in the chamber;
• and
• an analysis device configured to analyze the spectrum data measured by using the OES,
• wherein the analysis device is further configured to:
• collect the spectrum data by using the OES;
• select data of a first section and data of a second section, which have a first section size, from the spectrum data;
• scale each of the data of the first section and the data of the second section to a value greater than or equal to 0 and less than or equal to 1;
• convert the scaled data by using a fitting function f(x)=Ae−ω|xn|+c, where n is a rational number greater than or equal to 1, and less than or equal to 5;
• determine a peak probability of each of the data of the first section and the data of the second section by using the fitting function;
• based on the peak probability being less than a reference point, convert the peak probability into 0;
• based on the peak probability being equal to or greater than the reference point, convert the peak probability into 1;
• derive first data of the first optical signal;
• and
• extract a first similarity by comparing the first data with reference data of a reference optical signal,
• wherein the reference data and the first data are derived using a same method,
• wherein the analysis device is further configured to determine whether outside gas inflow occurred in the chamber based on the extracted first similarity, and
• wherein the substrate processing device is further configured to control, based on a result of the determination whether the outside gas inflow occurred in the chamber, the plasma source to generate the plasma for processing the substrate in the chamber.