Growth inhibitor for forming thin film, method for forming thin film and semiconductor substrate prepared therefrom

A method for forming a thin film comprising:

• i) vaporizing a growth inhibitor for forming a thin film, injecting the growth inhibitor into an atomic layer deposition (ALD) chamber, and adsorbing the growth inhibitor on a surface of a substrate loaded in the atomic layer deposition (ALD) chamber;
• ii) primary purging of an inside of the ALD chamber with a purge gas;
• iii) vaporizing a thin film precursor compound and adsorbing the thin film precursor compound on the surface of the substrate loaded in the ALD chamber;
• iv) secondary purging of the inside of the ALD chamber with a purge gas;
• v) supplying a reaction gas into the ALD chamber;
• and
• vi) tertiary purging of the inside of the ALD chamber with a purge gas, wherein a unit cycle comprises steps i) to vi) and is repeated to form the thin film,
• wherein a ratio of the feeding amount (mg/cycle) between the growth inhibitor for forming a thin film and the precursor compound in the ALD chamber is 1:1.5 to 1:20,
• wherein the growth inhibitor for forming a thin film is one or more selected from the group consisting of 1,1-dichloroethane, 1,2-dichloroethane, dichloromethane, 2-chloropropane, 1-chloropropane, 1,2-dichloropropane, 1,3-dichloropropane, 2,2-dichloropropane, 1 -chloropentane, 2-chloropentane, 3-chloropentane, chlorocyclopentane, n-butylchloride, tert-butyl chloride, sec-butyl chloride, isobutyl chloride, 1,2-dichlorobenzene, 1,4-dichlorobenzene, trimethylchlorosilane, trichloropropane, 2-chloro-2-methylbutane, and 2-methyl-1-pentane, and
• wherein the feeding amount of the growth inhibitor is 0.5-50 mg/cycle.