Chemical mechanical polishing compositions and methods of use thereof
AssigneeFujimi Incorporated
InventorsHooi-Sung Kim, Shogo Onishi
Life of this patent
Estimating the term…
Abstract
The present disclosure relates to chemical mechanical polishing (CMP) compositions for polishing molybdenum surfaces. In particular, the CMP composition includes an abrasive, a molybdenum (Mo) etching inhibitor, an oxidizer, and water, combined in specified amounts to provide a composition with advantageous properties such as high Mo:TEOS removal rate selectivity and/or high Mo:SiN removal rate selectivity.
Claims20
A polishing composition comprising an abrasive, a molybdenum etching inhibitor, an oxidizer, and water, wherein
- the abrasive is colloidal silica with a mean particle size ranging from about 30 to about 75 nm and a silanol density on the silica surface of from about 1.3 unit/nm2 to about 6.0 unit/nm2 the molybdenum etching inhibitor is a zwitterionic surfactant having a structure of formula (I):
- wherein n is an integer selected from 8, 9, 10, 12, 13, and 14;
- and
- the oxidizer is a peroxide;
- wherein the polishing composition has a pH from about 6.5 to about 8.5.
A polishing composition comprising an abrasive, a molybdenum etching inhibitor, an oxidizer, and water, wherein
- the abrasive is colloidal silica with a mean particle size ranging from about 30 to about 75 nm and a silanol density on the silica surface is from about 1.3 unit/nm2 to about 6.0 unit/nm2 present in a concentration of from about 0.1 wt % to about 5 wt %;
- the molybdenum etching inhibitor is a zwitterionic surfactant having a structure of formula (I):
- wherein n is an integer selected from 8, 9, 10, 12, 13, and 14 present in a concentration of from about 0.01wt % to about 0.1 wt %;
- and
- the oxidizer is a peroxide present in a concentration of from about 0.1 wt % to about 5 wt %;
- wherein the polishing composition has a pH from about 6.5 to about 8.5.
Dependencies are inferred from the claim text.