Semiconductor structure and method of manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJheng-Hong Jiang, Shing-Huang Wu, Chia-Wei Liu
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Abstract
A semiconductor structure is provided. The semiconductor structure includes a substrate, a pillar structure, a fin structure, and a buffering structure. The pillar structure is disposed on the substrate. The fin structure is connected to the pillar structure and is separate from the substrate. The buffering structure is disposed in the fin structure and includes a soft material layer and an air gap surrounded by the soft material layer. A method of manufacturing the semiconductor structure is also provided.
Claims20
A method of manufacturing a semiconductor structure, comprising:
- forming a first conductive layer over a substrate, wherein the first conductive layer includes a fixed portion connected to the substrate and a floating portion connected to the fixed portion and separated from the substrate by a sacrificial layer;
- forming a first trench in the first conductive layer, wherein a bottom of the first trench is separated from the sacrificial layer by the first conductive layer;
- forming a first soft material layer in the first trench and over the first conductive layer;
- forming an air gap sealed in the first trench;
- forming a second conductive layer over the first conductive layer, wherein the second conductive layer is separated from the air gap;
- and
- removing the sacrificial layer.
A method of manufacturing a semiconductor structure, comprising:
- forming a sacrificial layer over a substrate;
- forming a first conductive layer over the sacrificial layer, wherein the first conductive layer comprises a first portion coupled to the substrate and a second portion separated from the substrate;
- forming a trench in the first conductive layer after the forming of the first conductive layer over the sacrificial layer;
- forming a soft material layer to seal the trench and to form an air gap therein;
- forming a second conductive layer over the soft material layer;
- and
- removing the sacrificial layer after the sealing of the trench.
A method of manufacturing a semiconductor structure, comprising:
- receiving a substrate comprising a dielectric layer formed thereon;
- forming a sacrificial layer over the dielectric layer;
- forming a first conductive layer over the sacrificial layer, wherein the first conductive layer comprises a first portion coupled to the dielectric layer and a second portion separated from the dielectric layer, the first portion has a first thickness measured from a topmost surface of the first portion to a bottommost surface of the first portion, the second portion has a second thickness measured from a topmost surface of the second portion to a bottommost surface of the second portion, and the first thickness is greater than the second thickness;
- forming a trench in the second portion of the first conductive layer;
- forming a soft material layer in the trench, wherein an air gap is sealed in the trench by the soft material layer;
- forming a second conductive layer over the soft material layer;
- and
- removing the sacrificial layer.
Dependencies are inferred from the claim text.