FBAR filter with trap rich layer
AssigneeZhuhai Crystal Resonance Technologies Co., Ltd.
InventorDror Hurwitz
Life of this patent
Estimating the term…
Loading patent…
AssigneeZhuhai Crystal Resonance Technologies Co., Ltd.
InventorDror Hurwitz
Estimating the term…
An acoustic resonator forms a component of an FBAR filter that includes a trap-rich layer to avoid parasitic conduction by degrading carrier lifetimes of a free charge carriers. The acoustic resonator has a first electrode, a second electrode disposed parallel to the first planar portion and a piezoelectric layer disposed between and contacting both the first and second planar electrodes. A silicon-based a support layer is bonded to the second electrode and includes a trap region. The acoustic resonator may be manufactured by (a) depositing the trap region on the support layer; (b) oxidizing a surface of the trap region; (c) depositing a bonding layer on the oxidized surface of the trap region; (d) bonding a first electrode to the bonding layer; (e) contacting a first side of a piezoelectric layer to the electrode; and (f) contacting a second side of the piezoelectric layer a second electrode.
An acoustic resonator, comprising:
An organic based wafer level package that includes an acoustic resonator, comprising:
Dependencies are inferred from the claim text.