Three-dimensional memory devices having a cylindrical body and plate line contact segments

A memory structure, comprising:

• a memory cell comprising:
• a cylindrical body having a cylindrical shape;
• an insulating layer surrounding the cylindrical body;
• a word line contact surrounding a first portion of the insulating layer, the word line contact coupled to a word line;
• and
• a plurality of plate line contact segments surrounding a second portion of the insulating layer, the plurality of plate line contact segments coupled to a plurality of independent plate lines respectively and coupled to a common plate line;
• a bit line contact coupled to the memory cell, the bit line contact coupled to a bit line;
• and
• a source line contact coupled to the memory cell, the source line contact coupled to a source line.

A memory structure, comprising:

• a bottom conductive layer having a first type dopant;
• a memory stack on the bottom conductive layer, the memory stack comprising a plurality of alternatively arranged dielectric layers and conductive layers;
• a cylindrical body embedded in the memory stack, the cylindrical body having a second type dopant opposite from the first type dopant;
• and
• a top contact on the cylindrical body, the top contact having the first type dopant, wherein:
• the top contact is coupled to a bit line;
• a top conductive layer of the memory stack is coupled to a word line;
• the plurality of conductive layers other than the top conductive layer of the memory stack are coupled to a plurality of plate lines respectively, and the plurality of plate lines are connected to a common voltage source;
• and
• the bottom conductive layer is coupled to a source line.