Operation method of etching apparatus and method of manufacturing semiconductor device using the same

An operation method of an etching apparatus, the operation method comprising:

• transferring, from a load lock chamber to a first process chamber, a substrate on which an etching target layer is formed;
• first etching the etching target layer on the substrate in a first etching time in the first process chamber;
• transferring the substrate to a second process chamber adjacent to the first process chamber while a vacuum is maintained;
• second etching the etching target layer on the substrate in a second etching time in the second process chamber;
• intermediate cleaning the first process chamber while the second etching is being performed;
• transferring the substrate to a third process chamber adjacent to the second process chamber while a vacuum state is maintained;
• third etching the etching target layer on the substrate during a third etching time in the third process chamber;
• intermediate cleaning the second process chamber while the third etching is performed;
• and
• returning the substrate to the load lock chamber.

A method of manufacturing a semiconductor device, the method comprising:

• forming an etching target layer on a substrate;
• forming a mask pattern on the etching target layer;
• forming an etching pattern by etching the etching target layer using the mask pattern as an etching mask;
• and
• removing the mask pattern,
• wherein the forming the etching pattern comprises:
• transferring the substrate from a load lock chamber to a process chamber;
• first etching the etching target layer on the substrate in a first etching time;
• transferring the substrate to a storage location in a state in a vacuum state;
• intermediate cleaning the process chamber in a first cleaning time;
• transferring the substrate from the storage location to the process chamber;
• second etching the etching target layer on the substrate in a second etching time;
• and
• returning the substrate to the load lock chamber, and
• wherein the intermediate cleaning, the transferring of the substrate from the storage location to the process chamber, and the second etching are repeated at least once until the etching target layer is etched in the etching pattern.