Substrate treating apparatus

A substrate treating apparatus, comprising:

• a first process chamber having a first treatment space;
• a second process chamber having a second treatment space;
• a transfer robot configured to transfer a substrate to the first process chamber or the second process chamber;
• and
• an exhaust unit configured to exhaust atmosphere of the first treatment space and the second treatment space,
• wherein the first process chamber includes:
• a first treatment container providing the first treatment space;
• a first support unit configured to support and rotate the substrate in the first treatment space;
• and
• a first developer supply unit configured to supply a first developer onto the substrate, and
• the second process chamber includes:
• a second treatment container providing the second treatment space;
• a second support unit configured to support and rotate the substrate in the second treatment space;
• and
• a second developer supply unit configured to supply a second developer on the substrate, and
• the exhaust unit includes:
• an integrated exhaust line;
• a first exhaust line connecting the first process chamber and the integrated exhaust line;
• a second exhaust line connecting the second process chamber and the integrated exhaust line;
• a partition wall configured to partition a partial section of a flow path within the integrated exhaust line into a first flow path through which a fluid exhausted through the first exhaust line flows and a second flow path through which a fluid exhausted through the second exhaust line flows by a distance along a longitudinal direction of the integrated exhaust line in the integrated exhaust line;
• a first damper configured to adjust an exhaust flow rate of the first flow path independently from the second flow path;
• and
• a second damper configured to adjust an exhaust flow rate of the second flow path independently from the first flow path,
• wherein the partition wall is configured to partition the flow path of the integrated exhaust line by acting as a partitioning structure such that
• the first flow path is defined by the partition wall on one side and inner walls of the integrated exhaust line on all other sides, and
• the second flow path is defined by the partition wall on an opposite side and the inner walls of the integrated exhaust line on all other sides,
• wherein a first end of the partition wall is in contact with a first sidewall of the inner walls of the integrated exhaust line between the first exhaust line and the second exhaust line,
• a second end of the partition wall is located between the first sidewall and a second sidewall facing the first sidewall,
• wherein the partition wall includes
• a first portion extending at a first angle from the first sidewall of the inner walls of the integrated exhaust line to contact an end of a second portion, and
• the second portion extends parallel with the inner walls of the integrated exhaust line,
• wherein a sidewall of the first portion of the partition wall faces an opening of the second exhaust line at a second angle, the second exhaust line extending in a direction perpendicular to a surface of the sidewall of the second portion.

A substrate treating apparatus, comprising:

• a first process chamber having a first treatment space therein;
• a second process chamber having a second treatment space therein;
• and
• an exhaust unit configured to exhaust atmosphere of the first treatment space and the second treatment space,
• wherein the exhaust unit includes:
• an integrated exhaust line;
• a first exhaust line connecting the first process chamber and the integrated exhaust line;
• a second exhaust line connecting the second process chamber and the integrated exhaust line;
• a partition wall configured to prevent exhaust interference between the first process chamber and the second process chamber;
• a decompression unit in the integrated exhaust line;
• the first exhaust line, the second exhaust line, and the decompression unit are sequentially disposed along a longitudinal direction of the integrated exhaust line;
• in the integrated exhaust line, a first flow path through which a fluid exhausted through the first exhaust line flows and a second flow path through which a fluid exhausted through the second exhaust line flows;
• the partition wall configured to partition a partial section of a flow path within the integrated exhaust line into the first flow path and the second flow path by a predetermined distance along the longitudinal direction of the integrated exhaust line;
• a first damper configured to adjust an exhaust flow rate of the first flow path independently from the second flow path;
• and
• a second damper configured to adjust an exhaust flow rate of the second flow path independently from the first flow path,
• wherein the partition wall is configured to partition the flow path of the integrated exhaust line by acting as a partitioning structure such that
• the first flow path is defined by the partition wall on one side and inner walls of the integrated exhaust line on all other sides, and
• the second flow path is defined by the partition wall on an opposite side and the inner walls of the integrated exhaust line on all other sides,
• wherein a first end of the partition wall is in contact with a first sidewall of the inner walls of the integrated exhaust line between the first exhaust line and the second exhaust line,
• a second end of the partition wall is located between the first sidewall and a second sidewall facing the first sidewall,
• wherein the partition wall includes
• a first portion extending at a first angle from the first sidewall of the inner walls of the integrated exhaust line to contact an end of a second portion, and
• the second portion extends parallel with the inner walls of the integrated exhaust line,
• wherein a sidewall of the first portion of the partition wall faces an opening of the second exhaust line at a second angle, the second exhaust line extending in a direction perpendicular to a surface of the sidewall of the second portion.