Magnetoresistive element having compensated temperature coefficient of TMR

Magnetoresistive element, comprising:

• a reference layer having a pinned reference magnetization;
• a ferromagnetic sense layer having a free sense magnetization comprising a stable vortex configuration;
• and
• a tunnel barrier layer between the reference layer and the sense layer;
• wherein the sense layer comprises a first sense layer portion in contact with the tunnel barrier layer and a second sense layer portion in contact with the first sense layer portion;
• wherein the first sense layer portion is configured such that a magnetic coupling between the first and second sense layer portions is between ±10−4 J/m2 and ±10−3 J/m2;
• and a perpendicular magnetic anisotropy (PAM) originating from the interface between the first sense layer portion and the tunnel barrier layer is between 8×104 A/m and 8×105 A/m, such as to shift positively the temperature coefficient of sensitivity (TCS) of the magnetoresistive element and compensate the negative temperature coefficient of TMR of the magnetoresistive element.