Probe card system, method of manufacturing probe card system, method of using probe card system

A method of manufacturing a probe card system with the method comprising:

• receiving a carrier wafer having a first surface to be masked;
• forming a cavity in the carrier wafer from the masked first surface;
• forming a probe tip by filling the cavity with a conductive material;
• receiving an interposer with the interposer comprising:
• a probe head body;
• and
• a first interconnection structure on a first side of the probe head body;
• bonding the first surface of the carrier wafer and the first interconnection structure of the interposer;
• and
• releasing the probe tip from the carrier wafer by an etching operation.

A method of using a probe card system with the method comprising:

• receiving an interposer with the interposer comprising:
• a probe head body;
• a first interconnection structure on a first side of the probe head body;
• and
• a probe layer structure on the first side of the probe head body which is configured to engage with a wafer under test (WUT),
• wherein the probe layer structure comprises:
• a first sacrificial layer in connection with the first interconnection structure;
• a bonding layer in connection with the compliant layer;
• and
• a plurality of probe tips each in connection to respective conductive patterns exposed from the bonding layer and electrically connected to the first interconnection structure,
• forming an engagement layer on at least one of the bonding layer of the interposer or a contact terminal layer of the WUT;
• which engages the interposer and the WUT at a first temperature without forming an electrical connection between the probe tips and contact terminals of the contact terminal layer;
• and
• forming an electrical connection between the probe tips and contact terminals at a second temperature,
• wherein the second temperature is greater than the first temperature.