Spin-orbit torque device and manufacturing method thereof
AssigneesHyundai Motor Company, Kia Corporation, Korea Advanced Institute of Science and Technology
InventorsJi-Sung Lee, Joon-Hyun Kwon, Su-Jung Noh, Han-Saem Lee, Byong-Guk Park, Jaimin Kang, Jeong-Mok Kim, Soogil Lee
Life of this patent
Estimating the term…
Abstract
Disclosed herein is a spin-orbit torque device including a lower ferromagnetic layer, a non-magnetic layer bonded to the lower ferromagnetic layer, and an upper ferromagnetic layer bonded to the non-magnetic layer, wherein a magnetization orientation of the lower ferromagnetic layer is randomly distributed. According to the present disclosure, it is possible to provide a magnetic memory device which cannot be physically duplicated and has reconfigurability using a spin-orbit torque.
Claims12
A spin-orbit torque for a physically unclonable functions (PUF) device, comprising:
- a lower ferromagnetic layer;
- a non-magnetic layer bonded to the lower ferromagnetic layer;
- and
- an upper ferromagnetic layer bonded to the non-magnetic layer;
- wherein the lower ferromagnetic layer has horizontal anisotropy and the upper ferromagnetic layer has anisotropy perpendicular to a plane direction of the upper ferromagnetic layer;
- and
- wherein a ratio of magnetic domains with a magnetization direction of +x and magnetic domains with a magnetization direction of-x formed within the lower ferromagnetic layer is 50:50.
A spin-orbit torque for a physically unclonable functions (PUF) device, comprising:
- an antiferromagnetic layer;
- a lower ferromagnetic layer bonded to the antiferromagnetic layer;
- a non-magnetic layer bonded to the lower ferromagnetic layer;
- and
- an upper ferromagnetic layer which is bonded to the non-magnetic layer and which has perpendicular anisotropy;
- wherein a ratio of magnetic domains with a magnetization direction of +x and magnetic domains with a magnetization direction of-x formed within the lower ferromagnetic layer is 50:50;
- and
- wherein exchange coupling anisotropy is formed between the antiferromagnetic layer and the lower ferromagnetic layer.
Dependencies are inferred from the claim text.