Perovskite photoelectric device and manufacturing method thereof

A perovskite photoelectric device, comprising:

• a first electrode;
• a hole transport layer formed on the first electrode;
• a perovskite layer formed on the hole transport layer and made of a first perovskite compound;
• an electron transport layer formed on the perovskite layer;
• a second electrode formed on the electron transport layer;
• and
• a graded wall formed on the hole transport layer and the perovskite layer and made of a second perovskite compound,
• wherein the first perovskite compound and the second perovskite compound are represented by Formula 1 below,
• the graded wall suppresses movement of anions comprised in the perovskite layer, and
• wherein an anion concentration at the graded wall is higher than an anion concentration at the perovskite layer so that movement of anions comprised in the perovskite layer is suppressed:
• AaMbXc [Formula 1]
• where A is a monovalent cation, M is a divalent or trivalent metal cation, X is a monovalent anion, a+2b=c when M is a divalent metal cation, a+3B=c when M is a trivalent metal cation, and a, b and c are natural numbers.