Flip-chip light emitting diode having connecting electrodes with multiple binding layers including eutectic system with tin

A light-emitting device, comprising:

• a carrier substrate;
• at least one flip-chip light-emitting diode (LED) which is mounted onto said carrier substrate;
• and
• an electrode unit which is disposed between said carrier substrate and said flip-chip LED, and which includes a first connecting electrode and a second connecting electrode opposite in conductivity to said first connecting electrode,
• wherein each of said first connecting electrode and said second connecting electrode includes an intermediate metal layer and a binding layer that are sequentially disposed on said flip-chip LED in such order, said binding layer including a first portion that is adjacent to said carrier substrate and that forms an eutectic system with tin, and a second portion that is located between said first portion and said intermediate metal layer, and
• wherein for each of said first connecting electrode and said second connecting electrode, said intermediate metal layer includes at least one functional sublayer selected from a stress relieving sublayer, a stress transition sublayer, and a reflective sublayer.

A light-emitting device, comprising:

• a carrier substrate;
• at least one flip-chip light-emitting diode (LED) which is mounted onto said carrier substrate;
• and
• an electrode unit which is disposed between said carrier substrate and said flip-chip LED, and which includes a first connecting electrode and a second connecting electrode opposite in conductivity to said first connecting electrode,
• wherein each of said first connecting electrode and said second connecting electrode includes an intermediate metal layer and a binding layer that are sequentially disposed on said flip-chip LED in such order, said binding layer including a first portion that is adjacent to said carrier substrate and that forms an eutectic system with tin, and a second portion that is located between said first portion and said intermediate metal layer, and
• wherein for each of said first connecting electrode and said second connecting electrode, said intermediate metal layer includes a plurality of stress relieving sublayers, and at least one migration resisting sublayer, said migration resisting sublayer being interposed between any two immediately adjacent ones of said stress relieving sublayers.