Crystalline p-type semiconductor film and thin film transistor and diode and electronic device

An electronic device comprising a semiconductor device, the semiconductor device including a crystalline p-type semiconductor film having a plurality of crystal grains with an average grain size of submicron, wherein the crystalline p-type semiconductor film comprises tin-doped copper(I) iodide, a size of the plurality of crystal grains is distributed within the range of greater than about 0 nm and less than or equal to about 100 nm, and the ratio of tin to the total content of tin-doped copper(I) iodide is about 22 wt % to about 28 wt %.

An electronic device comprising a thin film transistor, the thin film transistor including a crystalline p-type semiconductor film having a plurality of crystal grains with an average grain size of submicron, wherein the crystalline p-type semiconductor film comprises tin-doped copper(I) iodide, a size of the plurality of crystal grains is distributed within the range of greater than about 0 nm and less than or equal to about 100 nm, and the ratio of tin to the total content of the tin-doped copper(I) iodide is about 22 wt % to about 28 wt %.