DBI to Si bonding for simplified handle wafer
AssigneeAdeia Semiconductor Bonding Technologies Inc.
InventorsChandrasekhar Mandalapu, Gaius Gillman Fountain, Jr., Guilian Gao
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Abstract
Devices and techniques include process steps for preparing various microelectronic components for bonding, such as for direct bonding without adhesive. The processes include providing a first bonding surface on a first surface of the microelectronic components, bonding a handle to the prepared first bonding surface, and processing a second surface of the microelectronic components while the microelectronic components are gripped at the handle. In some embodiments, the processes include removing the handle from the first bonding surface, and directly bonding the microelectronic components at the first bonding surface to other microelectronic components.
Claims32
A method comprising:
- preparing a bonding surface of a first bonding layer on a substrate;
- direct bonding a first side of each of a plurality of dies to the bonding surface using a direct non-adhesive technique to form at least a portion of a structure;
- while the substrate supports the plurality of dies, processing a second side of each of the plurality of dies, wherein the second side is opposite the first side;
- after processing the second side of each of the plurality of dies, removing at least the substrate by grinding or polishing the substrate to expose a surface of each of the plurality of dies;
- applying a first protective coating over the surface and a second protective coating over the first protective coating, wherein the first protective coating is formed of a first material and the second protective coating is formed of a second material that is different than the first material;
- and
- after removing the substrate, singulating the structure to form a plurality of microelectronic units, wherein each of the plurality of microelectronic units comprises at least one of the plurality of dies.
A method comprising:
- direct bonding a plurality of dies to a first bonding layer on a substrate using a permanent direct non-adhesive technique, wherein the plurality of dies comprises a first die;
- while the substrate supports the plurality of dies, planarizing a first surface of each of the plurality of dies and providing a second bonding layer on the first surfaces, wherein the first surfaces face away from the substrate;
- removing at least the substrate by grinding or polishing to expose a second surface of each of the plurality of dies;
- applying a first protective coating over the second surface and a second protective coating over the first protective coating, wherein the first protective coating is formed of a first material and the second protective coating is formed of a second material that is different than the first material;
- and
- direct bonding a second die to the second bonding layer on the first die using a direct bonding technique without an adhesive, wherein the second bonding layer on the first die comprises a first conductive feature and the second die comprises a second conductive feature directly bonded to the first conductive feature.
A method comprising:
- providing a bonded structure comprising a microelectronic component directly bonded to a bonding layer on a substrate using a direct non-adhesive technique;
- while the substrate supports the microelectronic component, processing the microelectronic component to form a first surface on the microelectronic component, wherein the first surface faces away from the substrate;
- after processing the microelectronic component to form the first surface, removing at least the substrate to expose a second surface of the microelectronic component;
- applying a first protective coating over the second surface and a second protective coating over the first protective coating, wherein the first protective coating is formed of a first material and the second protective coating is formed of a second material that is different than the first material;
- and
- after applying the first and second protective coatings, singulating the bonded structure to form a plurality of microelectronic units, wherein at least one of the plurality of microelectronic units comprises the microelectronic component.
Dependencies are inferred from the claim text.