Methods and apparatus for mask patterning debris removal

A method of a patterning a mask on a wafer, comprising:

• forming a mask layer on the wafer;
• forming a pattern in the mask layer using a laser beam from a laser assembly, wherein the pattern is configured to allow singulation of the wafer by deep etching, wherein the laser assembly forms at least one trench in the mask layer with the laser beam, and wherein the laser beam has a process point at a bottom of the at least one trench;
• directing one or more gas nozzles that flow a pressurized gas at the process point in the at least one trench as the pattern is formed, wherein the one or more gas nozzles form a gas flow angle relative to the process point;
• and
• evacuating debris from the at least one trench using at least one area of negative pressure, wherein gas flow from the one or more gas nozzles and the at least one area of negative pressure are in fluid contact and are confined within a cylindrical housing, wherein the cylindrical housing has a partially enclosed end distal to the process point that is sealed by and attached to the laser assembly via an opening in the partially enclosed end, and wherein the cylindrical housing moves in conjunction with the laser assembly above the process point.