Tin oxide films in semiconductor device manufacturing
AssigneeLam Research Corporation
InventorsJengyi Yu, Samantha S. H. Tan, Yu Jiang, Hui-Jung Wu, Richard Wise, Yang Pan, Nader Shamma, Boris Volosskiy
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AssigneeLam Research Corporation
InventorsJengyi Yu, Samantha S. H. Tan, Yu Jiang, Hui-Jung Wu, Richard Wise, Yang Pan, Nader Shamma, Boris Volosskiy
Estimating the term…
A method of processing a substrate includes: providing a substrate having one or more mandrels comprising a mandrel material, wherein a layer of a spacer material coats horizontal surfaces and sidewalls of the one or more mandrels; and etching and completely removing the layer of the spacer material from the horizontal surfaces of the one or more mandrels and thereby exposing the mandrel material, without completely removing the spacer material residing at the sidewalls of the one or more mandrels. The etching includes exposing the substrate to a plasma formed using a mixture comprising a first gas and a polymer-forming gas, and wherein the etching comprises forming a polymer on the substrate. Polymer-forming gas may include carbon (C) and hydrogen (H).
A method of processing a substrate, the method comprising:
Dependencies are inferred from the claim text.